Related papers: Effects of Interface Roughness Scattering on Radio…
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions,…
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a…
In this paper, we study the vulnerability of 5nm node FinFET and nanowire (20nm gate length) and their corresponding SRAM under radiation. Ab initio tools, SRIM, PHITS, and GEANT4, are used to find the Linear Energy Transfer (LET) of…
The superconducting proximity effect has been the focus of significant research efforts over many years and has recently attracted renewed interest as the basis of topologically non-trivial states in materials with a large spin orbit…
Ballistic injection in a nanodevice is a complex process where electrons can either be transmitted or reflected, thereby introducing deviations from the otherwise quantized conductance. In this context, quantum rings (QRs) appear as model…
Intelligent reflecting surfaces (IRSs) are promising enablers for next-generation wireless communications due to their reconfigurability and high energy efficiency in improving poor propagation condition of channels, e.g., limited…
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The…
Intelligent reflecting surface (IRS) has drawn a lot of attention recently as a promising new solution to achieve high spectral and energy efficiency for future wireless networks. By utilizing massive low-cost passive reflecting elements,…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…
Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The low temperature mobility in such layers is limited by the…
Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances.…
In this paper, we focus on intelligent reflecting surface (IRS) assisted multi-antenna communications with transceiver hardware impairments encountered in practice. In particular, we aim to maximize the received signal-to-noise ratio (SNR)…
We present a first-principles study on lattice vibrational modes of Si/Ge core-shell nanowires (NWs). In addition to quantum confinement, the internal strain induced by the lattice mismatch between core and shell contributes to significant…
Intelligent reflecting surfaces (IRSs) have attracted considerable attention because of their ability to dynamically control electromagnetic wave propagation. While most existing IRSs have been developed for low-power communication and…
In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an…
Photonic or electronic confinement effects in nanostructures become significant when one of their dimension is in the 5-300 nm range. Improving their development requires the ability to study their structure - shape, strain field,…
Radiation loss and resonant frequency shift due to sidewall surface roughness of circular and square high-contrast microcavities are estimated and compared by using a boundary integral equations method. An effect of various harmonic…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
Intelligent reflecting surfaces (IRSs) were introduced to enhance the performance of wireless communication systems. However, from a service provider's viewpoint, a concern with the use of an IRS is its effect on out-of-band (OOB) quality…
This letter investigates the impact of co-channel interference (CCI) on the performance of a decode-and-forward (DF) relaying network with a reconfigurable intelligent surface (RIS)-assisted source. We consider one source, multiple DF…