Related papers: Shot noise in magnetic tunnel junctions from first…
We address Fano-like interference effects in scanning tunneling microscopy (STM) measurements of nanoscale systems, e.g. two-level systems. Common for these systems is that second order tunneling contributions give rise to interference…
We have investigated how the Coulomb blockade of a mesoscopic Josephson junction in a high-impedance environment is suppressed by shot noise from an adjacent junction. The presented theoretical analysis is an extension of the phase…
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the…
We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of…
Based on tight-binding model and a generalized Green's function method in Landauer-B\"uttiker formalism, the effects of quantum interference (QI) on the noise power and Fano factor of an armchair graphene nanoribbon (aGNR) sandwiched…
The shot noise power and the Fano factor of a spinless resonant level model is calculated. The Coulomb interaction which in this model acts between the lead electron and the impurity is considered in the first order approximation. The…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation,…
We propose the perspective of symmetry-selective resonance of the $\Delta_1$ states in the Fe/MgO/ZnO/MgO/Fe heterostructures, offering a broad landscape to design magnetic tunnel junctions (MTJs) that yield a towering tunnel…
In the presence of direct trajectories connecting source and drain contacts, the conductance of a quantum dot may exhibit resonances of the Fano type. Since Fano resonances result from the interference of two transmission pathways, their…
We study shot noise in a two-dimensional, disordered marginal Fermi liquid (MFL) driven out of equilibrium. We consider electrons with Planckian dissipation on the Fermi surface coupled to quantum-critical bosons in the presence of…
We investigate the electronic shot noise produced by nanowires of $\beta$-Ta, an archetypal ``bad" metal with resistivity near the Ioffe-Regel localization limit. The Fano factor characterizing the shot noise exhibits a strong dependence on…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
We have measured the influence of shot noise on hysteretic Josephson junctions initially in macroscopic quantum tunnelling (MQT) regime. Escape threshold current into the resistive state decreases monotonically with increasing average…
Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, and bio-medical sensing. To improve the detection capability…
The detection of elementary carriers in transport phenomena is one of the most important keys to understand non-trivial properties of strongly-correlated quantum matter. Here we propose a method to identify the tunneling current carrier in…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed,…
MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared…