Related papers: Short-range defects contribution to the monolayer …
The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…
Scattering problem for electrons in monolayer graphene with short-range perturbations of the types "local chemical potential" and "local gap" has been solved. Zero gap and non-zero gap kinds of graphene are considered. The determined…
We consider a problem of obtaining information about the scattering potentials of the monolayer graphene sample using available experimental data on its resistance. We have in mind a development of the study describing super-high mobility…
We analyze the scattering sector of the Hamiltonians for both gapless and gapped graphene in the presence of a charge impurity using the 2D Dirac equation, which is applicable in the long wavelength limit. We show that for certain range of…
Resonant scattering of electrons with low energies (as compared to the bandwidth) on a single neutral short-range impurity in graphene is analyzed theoretically, taking into account the valley degeneracy. Resonances dramatically increase…
Electron scattering in the monolayer graphene with short-range impurities modelled by the annular well with a band-asymmetric potential has been considered. Band-asymmetry of the potential resulted in the mass (gap) perturbation in the…
We discuss various scattering mechanisms for Dirac fermions in single-layer graphene. It is shown that scattering on a short-range potential (due to, for example, neutral impurities) is mostly irrelevant for electronic quality of graphene,…
The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the…
We model disorder in graphene by random impurities treated in a coherent-potential approximation. Using the analytically solvable Lloyd model for the disorder distribution, we show that the temperature dependence of the minimum conductivity…
Electron scattering problem in the monolayer graphene with short-range impurities is considered. The main novel element in the suggested model is the band asymmetry of the defect potential in the 2+1-dimensional Dirac equation. This…
It is shown that clustering of charged impurities on graphene can suppress their contribution to the resistivity by a large factor of about the number of impurities per cluster, while leaving the density dependence unchanged. If the cluster…
Bound electron states in impure graphene are considered. Short-range perturbations for defect and impurities of the types "local chemical potential" and "local gap" are taken into account.
Chemical, mechanical, thermal and/or electronic properties of bulk or low-dimensional materials can be engineered by introducing structural defects to form novel functionalities. When using particles irradiation, these defects can be…
We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For holes, we found that at low concentration they give a negligible contribution to the resistivity. Whenever…
We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For the case of holes, we obtain the phase shift and found that at low concentration they appear to be irrelevant for…
We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the…
Theory of scattering of massive chiral fermions in bilayer graphene by radial symmetric potential is developed. It is shown that in the case when the electron wavelength is much larger than the radius of the potential the scattering…
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…
We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…
We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…