Related papers: Localization and Mobility Gap in Topological Ander…
We demonstrate that interacting electrons in AB-stacked $\mathrm{MoTe}_2/\mathrm{WSe}_2$ realize a topological Kondo insulator at hole filling $\nu=2$ per moir\'e unit cell. In the presence of only local correlations, a symmetry of the…
We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large-gap quantum valley Hall insulator. We find an emergence of bound states lying inside…
Topological insulators are crystalline materials that have revolutionized our ability to control wave transport. They provide us with unidirectional channels that are immune to obstacles, defects or local disorder, and can even survive some…
Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A "strong" topological insulator is characterized by robust conducting states on \emph{all} boundaries protected by…
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for…
One-dimensional topological Anderson insulators provide a paradigm for disorder-induced topological phases in which the underlying system turns from a trivial to a topological phase. It is widely recognized that the latter vanishes at large…
Although many possible two-dimensional (2D) topological insulators (TIs) have been predicted in recent years, there is still lack of experimentally realizable 2D TI. Through first-principles and tight-binding simulations, we found an…
Disorder, traditionally believed to hinder the propagation of waves. has recently been shown to prompt the occurrence of topological phase transitions. For example, when disorder strength continuously increases and surpasses certain…
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This…
We examine the impact of non-magnetic disorder on the electronic states of a multilayer structure comprising layers of both topological and conventional band insulators. Employing the Burkov-Balents model with renormalized tunneling…
We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…
This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different…
Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as…
The presence of random disorder in a metallic system accounts for the localization of extended states in general. On the contrary, the presence of disorder can induce topological phases hosting metallic boundary states out of a…
Abstract: Using ab initio calculations supported by experimental transport measurements, we present the first credible candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High energy…
Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-topological insulator (TI) transitions induced by disorder. The obtained exponent nu~2.7 shows no conspicuous deviation from the value…
The topological Anderson and Mott insulators are two phases that have so far been separately and widely explored beyond topological band insulators. Here we combine the two seemingly different topological phases into a system of spin-1/2…
Bloch wavefunctions in crystals experience localization within the bulk when disorder is introduced, a phenomenon commonly known as Anderson localization. This effect is considered universal, being applicable to all types of waves, quantum…
We examine the emergence of topological Anderson insulating phases in the spinful Haldane model with Hubbard and next-neighbor density-density interactions, subject to Anderson disorder. Using finite-size exact diagonalization, we…
In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the…