Related papers: Disorder by order in graphene
Despite extensive existing studies, a complete understanding of the role of disorder in affecting the physical properties of two-dimensional Dirac fermionic systems remains a standing challenge, largely due to obstacles encountered in…
Introducing quasiparticle anisotropy in graphene via uniaxial strain has a profound effect on the polarization charge density induced by external impurities, both Coulomb and short-range. In particular, the charge distribution induced by a…
We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete…
The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here,…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…
We report anomalous quantum transport features in bilayer graphene in presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer…
We review the transmission of Dirac electrons through a potential barrier in the presence of circularly polarized light. A different type of transmission is demonstrated and explained. Perfect transmission for nearly head-on collision in…
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley…
Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order $e^2/h$ and its dependence on the carrier density has a scaling form that is…
We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…
Disorder can profoundly affect the transport properties of a wide range of quantum materials. Presently, there is significant disagreement regarding the effect of disorder on transport in the disordered Bose-Hubbard (DBH) model, which is…
A layered system of charges with logarithmic interaction parallel to the layers and random dipoles in each layer is studied via a variational method and an energy rationale. These methods reproduce the known phase diagram for a single layer…
The effect of disorder on transport and magnetization in ferromagnetic III-V semiconductors, in particular (Ga,Mn)As, is studied theoretically. We show that Coulomb-induced correlations of the defect positions are crucial for the transport…
Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means…
Recent measurements revealed an anomalous Coulomb drag in graphene, hinting at new physics at charge neutrality. The anomalous drag is explained by a new mechanism based on energy transport, which involves interlayer energy transfer,…
We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…
We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor…
We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are…
Impurities are unavoidable during the preparation of graphene samples and play an important role in graphene's electronic properties when they are adsorbed on graphene surface. In this work, we study the electronic structures and transport…