Related papers: Spin Accumulation at Ferromagnet/Non-magnetic Mate…
We present new mechanism for manipulation of the spin-wave amplitude through the use of the dynamic charge-mediated magnetoelectric effect in ultrathin multilayers composed of dielectric thin-film capacitors separated by a ferromagnetic…
We report an advanced organic spin-interface architecture with magnetic remanence at room temperature, constituted by metal phthalocyanine molecules magnetically coupled with Co layer(s), mediated by graphene. Fe- and Cu-phthalocyanines…
The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. Connecting two materials with different Peltier coefficients causes a net heat flow towards or away from the…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
Spin accumulation induced by an electric field in chiral electron system is investigated based on a linear response theory. It is shown that the spin response function has a spatially uniform component due to the chiral angular momentum…
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating…
In this paper we review the recent field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by metals, oxides,…
We show that some metals and alloys (X = Cu, Ag, FeMn, or Cu and Ag combined with each other), sputtered between ferromagnetic Co and superconducting Nb, produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR) in a…
Spintronic devices are based on heterojunctions of two materials with different magnetic and electronic properties. Although an energy barrier is naturally formed even at the interface of metallic heterojunctions, its impact on spin…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
The non-equilibrium spin accumulation in ferromagnetic double barrier junctions is shown to govern the transport in small structures. Transport properties of such systems are described by a generalization of the theory of the Coulomb…
We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin…
"Spin pumping" is the injection of spin angular momentum by a time-dependent magnetization into an adjacent normal metal proportional to the spin mixing conductance. We study the role of electrostatic interactions in the form of crystal…
Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasi-particles such as electrons and magnons, or by…
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…
Interfaces play a substantial role for the functional properties of structured magnetic materials and magnetic multilayers. Modeling the functional behavior of magnetic materials requires the treatment of the relevant phenomena at the…
We investigate a spin-electricity conversion effect in a topological insulator/ferromagnet heterostructure. In the spin-momentum-locked surface state, an electric current generates nonequilibrium spin accumulation, which causes a spin-orbit…
The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices…
We describe the coherent interaction between a defect spin at the interface of a ferromagnet and a non-magnetic material, under bias and when the magnetization of the ferromagnetic contact precesses during ferromagnetic resonance. The…
At the interface between a superconductor and a ferromagnetic metal spin-singlet Cooper pairs can penetrate into the ferromagnetic part of the heterostructure with an oscillating and decaying spin-singlet Cooper pair density. However, if…