Related papers: Multiphonon Raman Scattering in Graphene
We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the…
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
We have investigated the interlayer shear and breathing phonon modes in MoS$_{2}$ with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four…
We present complete calculations of the two-phonon Raman bands of bilayer graphene, including all overtone and combination modes, within a density-functional tight-binding model. Based on our results, we assign unambiguously the observed…
We report ab-initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman active modes, A1g and E2g as a function of the number of layers.…
We present a computational study of the two-phonon Raman spectra of silicene and graphene within a density-functional non-orthogonal tight-binding model. Due to the presence of linear bands close to the Fermi energy in the electronic…
We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma-point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced…
The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface…
Resonance Raman scattering, which probes electrons, phonons and their interplay in crystals, is extensively used in two-dimensional materials. Here we investigate Raman modes in MoSe$_2$ at different laser excitation energies from 2.33 eV…
Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking…
Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain.…
Strain is prominent in fabricated samples of two-dimensional semiconductors and it also serves as an exploitable tool for engineering their properties. However, quantifying strain and characterizing its spatially inhomogeneous distribution…
Landau level broadening mechanisms in electrically neutral and quasineutral graphene were investigated through micro-magneto-Raman experiments in three different samples, namely, a natural single-layer graphene flake and a back-gated…
The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be…
We report a high-pressure Raman spectroscopy study of a graphite-water mixture using water as the pressure-transmitting medium up to 9.9 GPa. In the graphite-rich region, three characteristic Raman features-the $E_{2g}^{(1)}$ shear mode,…
Broadening of the Raman scattering (RS) spectra was studied in monolayer graphene samples irradiated with various dose of ions followed by annealing of radiation damage at different temperatures. It is shown that the width {\Gamma} (full…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…
We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force…
Twisted-bilayer graphene (tBLG) exhibits van Hove singularities in the density of states that can be tuned by changing the twisting angle $\theta$. A $\theta$-defined tBLG has been produced and characterized with optical reflectivity and…