Related papers: Electronic Highways in Bilayer Graphene
Twisted bilayer graphene gives rise to large moir\'{e} patterns that form a triangular network upon mechanical relaxation. If gating is included, each triangular region has gapped electronic Dirac points that behave as bulk topological…
A parabolic quantum dot (QD) as realized by biasing nanostructured gates on bilayer graphene is investigated in the presence of electron-electron interaction. The energy spectrum and the phase diagram reveal unexpected transitions as…
The development of valleytronics demands long-range electronic transport with preserved valley index, a degree of freedom similar to electron spin. A promising structure for this end is a topological one-dimensional (1D) channel formed in…
In this review, we present recent works on materials whose common point is the presence of electronic bands of very low dispersion, called "flat bands", which are due to specific atomic order effects without electron interactions. These…
The effect of an inhomogeneous magnetic field which varies inversely as distance on the ground state energy level of graphene is studied. In this work, we analytically show that graphene under the influence of a magnetic field arising from…
We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…
We theoretically study the electronic structure of small-angle twisted bilayer graphene with a large potential asymmetry between the top and bottom layers. We show that the emergent helical states known to appear on the triangular AB-BA…
We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…
Gapped bilayer graphene can support the presence of intragap states due to kink gate potentials applied to the graphene layers. Electrons in these states display valley-momentum locking, which makes them attractive for topological…
An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…
Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…
We investigate the electronic Bloch oscillation in bilayer graphene gradient superlattices using transfer matrix method. By introducing two kinds of gradient potentials of square barriers along electrons propagation direction, we find that…
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration,…
We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…
We study the states localized near an interface between conducting and insulating bilayer graphene (BLG) and show that they have highly unusual properties that have no analog in conventional systems. Moreover, the states belonging to the…
We propose a model of spin-polarized-current state for electrons in bilayer graphene. The model resolves the puzzles as revealed by experiments that (a) the energy gap $E_{\rm gap}$ of the insulating ground state at the charge neutrality…
Analytical treatments of tunneling in bilayer graphene have typically relied on minimal models including only the vertical interlayer hopping $\gamma_1$ and have been restricted to the weak interlayer bias regime $2\varepsilon \ll…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…
A-B stacked bilayer graphene has massive electron and hole-like excitations with zero gap in the nearest-neighbor hopping approximation. In equilibrium, the quasiparticle occupation approximately follows the usual Fermi-Dirac distribution.…