Related papers: Highly luminescent a-SiOx<Er>/SiO2/Si multilayer s…
We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS$_2$ by treatment with O$_2$:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS$_2$ by TEM, Raman and PL mapping and discuss the role of MoO$_x$…
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and high temperature profiles ($>1000^\circ$C). When the maximum…
Room-temperature 1535-nm-band photoluminescence in ~126 nm silica films (6 at. % doping), produced by spin-coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace…
Electrical modulation and switching of photoluminescence (PL) have been demonstrated in pure deformed helix ferroelectric liquid crystal (DHFLC) material. The PL intensity increases and peak position shifts towards lower wavelength above a…
We report on spectral and timing analysis of BeppoSAX data of the 13.6 s period transient X-ray pulsar EXO 0531-6609.2. Observations were carried out in March 1997 and October 1998, catching the source during a high and a low emission…
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…
Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum…
Size effects are ubiquitous in the structural, mechanical, and physical properties of materials, making it highly desirable to study the intrinsic properties of thick objects through high-resolution structural analysis in transmission…
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and doping values. For…
High-resolution photoelectron momentum distributions of Xe atoms ionized by 800-nm linearly polarized laser fields have been traced at intensities from 1.1*1013 to 3.5*1013W/cm2 using velocity-map imaging techniques. At certain laser…
Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this…
Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…
Photoluminescence (PL) features of nanostructured h-BN powder are studied in the range of 200-600 nm in millisecond time window. It is found that four PL excitation bands of 4.58, 5.01, 5.29, and 5.77 eV are characteristic of the spectral…
We investigated transient optical responses in an optimally-doped high-Tc superconductor La2-xSrxCuO4 (x=0.15) by using 800-nm optical pump and terahertz probe spectroscopy. With increasing the photoexcitation intensities, the Josephson…
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109{\Omega}-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra…
We theoretically discuss the physical origin of the dielectric constants [{\epsilon}({\omega})] and second harmonic generation coefficients [\{chi}(2)({\omega})] of the ABA-stacked two-dimensional graphene-like silicon carbide (2D-SiC) with…
A stable 50 mJ three-channel optical waveform synthesizer is demonstrated and used to reproducibly generate a high-order harmonics supercontinuum in the soft-x-ray region. This synthesizer is composed of pump pulses from a…
It is shown that the well-known blue-shift of the fundamental absorption edge in as-deposited compositionally modulated amorphous Si/Ge and As6Se94/Se80Te20 multilayers (with periods of 4-8 nm) is further enhanced due to the thermal or…
A femtosecond frequency-doubled Erbium-doped fiber laser with adjustable pulse repetition rate is developed and applied in two-photon excited fluorescence microscopy. The all-fiber laser system provides the fundamental pulse at 1560 nm…