Related papers: Bottom-gated epitaxial graphene suitable for half-…
We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…
The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in…
Graphene holds promises for exploring exotic superconductivity with Dirac-like fermions. Making graphene a superconductor at large scales is however a long-lasting challenge. A possible solution relies on epitaxially-grown graphene, using a…
100 % absorption in a two-dimensional electron gas (2DEG) with Dirac spectrum is demonstrated to be obtained by controlling the interference of multiple incident radiations, referred to as coherent perfect absorption (CPA). However, when a…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered…
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated…
Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be…
We investigated the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrated that graphene exhibits semiconducting positive photoconductivity near zero…
Exploiting quantum interference of charge carriers, epitaxial graphene grown on silicon carbide emerges as a game-changing platform for ultra-sensitive bolometric sensing, featuring an intrinsic resistive thermometer response unmatched by…
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the…
Composite fermions in fractional quantum Hall (FQH) systems are believed to form a Fermi sea of weakly interacting particles at half filling $\nu=1/2$. Recently, it was proposed (D. T. Son, Phys. Rev. X 5, 031027 (2015)) that these…
In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts.…
The integer quantum Hall states at fillings $\nu = 0$ and $|\nu| = 1$ in monolayer graphene have drawn much attention as they are generated by electron-electron interactions. Here we explore aspects of the $\nu = 0$ and $|\nu| = 1$ quantum…
Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures…
We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices.…
Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered Sn $(1\times1)$ structure on the SiC surface with quasi-freestanding graphene on top. While the electronic properties of the individual layers have been…
We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements…
Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport…
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the…