Related papers: Spin dephasing in III-V nanowires
We investigate electron spin dynamics in narrow two-dimensional n-InGaAs channels as a function of the channel width. The spin relaxation times increase with decreasing channel width, in accordance with recent theoretical predictions based…
Hyperpolarized nanoparticles (NPs) offer high polarization levels with room temperature relaxation times exceeding half an hour. In this work, we demonstrate that the achievable hyperpolarization enhancement and relaxation (decay) time at…
The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb…
We study a simple model of dephasing of Aharonov-Bohm oscillations in the transmission of an electron across a mesoscopic ring. A magnetic impurity in one of the arms of the ring couples to the electron spin via an exchange interaction.…
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in…
Through the theoretical study of electron spin lifetime in the 2DEG of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low…
We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving…
The established spin splitting in monolayer (ML) of transition metal dichalcogenides (TMDs) that is caused by inversion symmetry breaking is dictated by mirror symmetry operations to exhibit fully out-of-plane direction of spin…
Understanding the spin dephasing mechanism is of fundamental importance in all potential applications of the spin qubit. Here we demonstrate a spin dephasing mechanism in semiconductor quantum dot due to the $1/f$ charge noise. The…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
The spin relaxation induced by the Elliott-Yafet mechanism and the extrinsic spin Hall conductivity due to the skew-scattering are investigated in 5d transition-metal ultrathin films with self-adatom impurities as scatterers. The values of…
Coupled spin evolution and tunneling together with the relaxation and decoherence effects are studied for the double quantum dot formed in a semiconductor nanowire and driven by the periodic electric field. Such system represents a model of…
In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit…
Spin-charge interconversion is currently the focus of intensive experimental and theoretical research both for its intrinsic interest and for its potential exploitation in the realization of new spintronic functionalities. Spin-orbit…
We comment on the conclusion by Teng et al. [J. Phys. D: Appl. Phys. {\bf 42}, 135111 (2009)] that the Bir-Aronov-Pikus mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk GaAs. We point…
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the…
Based on spin-charge coupled drift-diffusion equations, which are derived from kinetic equations for the spin-density matrix in a rigorous manner, the electric-field-induced nonequilibrium spin polarization is treated for a two-dimensional…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
We describe a broadly-applicable theory of spin relaxation in materials with incoherent charge transport; examples include amorphous inorganic semiconductors, organic semiconductors, quantum dot arrays, and systems displaying…
We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of doped semiconductors. The Dresselhaus-type (i.e. allowed by bulk-inversion asymmetry) hopping terms are derived…