Related papers: Polarization sensitive solar-blind detector based …
Inversion- and depletion-regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets…
Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on…
Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in…
In this paper, we analyze the scattering of solar neutrinos on the polarized electron target, and predict how the effect of parity violation in weak interactions may help to distinguish neutrino signal from detector background. We indicate…
We present recent improvements in polarization analysis with the INTEGRAL SPI data. The SPI detector plane consists of 19 independent Ge crystals and can operate as a polarimeter. The anisotropy characteristics of Compton diffusions can…
We introduce optical polarization-insensitive high pass filters based on total internal reflection of light at the interface of two dielectric media (1D) and Bragg reflection of a multilayer stack (2D) in transmission mode. The wavevectors…
Detection of the vacuum ultraviolet (VUV) scintillation light produced by liquid noble elements is a central challenge in order to fully exploit the available timing, topological, and calorimetric information in detectors leveraging these…
The paper proposes a model of an organic solar cell based on Tamm plasmon polariton localized at the boundary of the active layer doped with plasmon nanoparticles and a multilayer mirror. It is shown that the integral absorption in the…
The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
Color filters have important applications in the area of Nano-spectroscopy and ccd imaging applications. Metallic nanostructures provide an efficient way to design and engineer ultrathin color filters. These nanostructures have capability…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
Exciton-polaritons (EPs) arising from strong light-matter coupling offer new pathways for controlling optoelectronic properties. While typically requiring closed optical cavities for strong coupling, we demonstrate that 2D metal-organic…
We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakes of…
An X-ray photoelectric polarimeter based on the Gas Pixel Detector has been proposed to be included in many upcoming space missions to fill the gap of about 30 years from the first (and to date only) positive measurement of polarized X-ray…
The absorption of electromagnetic radiation by a planar structure, consisting of a three-layer dielectric-metal-dielectric coating on a metal back-reflector is analysed. The conditions for total absorption are derived. Our analysis shows…
Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems…
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias…
A planar slab of negative index material works as a superlens with sub-diffraction-limited imaging resolution, since propagating waves are focused and, moreover, evanescent waves are reconstructed in the image plane. Here, we demonstrate a…
We report on a spectro-polarimetric analysis of four southern Ultra-Luminous Infrared Galaxies (ULIRGs), aimed at constraining the presence of hidden broad AGN lines. For IRAS 19254--7245 ({\sl The Superantennae}) we find evidence for a…