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Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are…

Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…

Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the…

Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…

In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…

Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…

Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of…

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…

Emerging technologies present opportunities for system designers to meet the challenges presented by competing trends of big data analytics and limitations on CMOS scaling. Specifically, memristors are an emerging high-density technology…

Multi-core neuromorphic systems typically use on-chip routers to transmit spikes among cores. These routers require significant memory resources and consume a large part of the overall system's energy budget. A promising alternative…

Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…

CMOS technology and its continuous scaling have made electronics and computers accessible and affordable for almost everyone on the globe; in addition, they have enabled the solutions of a wide range of societal problems and applications.…

Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…

Conventional neuro-computing architectures and artificial neural networks have often been developed with no or loose connections to neuroscience. As a consequence, they have largely ignored key features of biological neural processing…

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…