Related papers: Strong quantum interference in strongly disordered…
Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order…
The variable range hopping (VRH) model has been widely applied to describe electrical transport in disordered systems, providing theoretical formulas to fit temperature-dependent electric conductivity. These models rely on oversimplified…
Mott variable-range hopping is a fundamental mechanism for electron transport in disordered solids in the regime of strong Anderson localization. We give a brief description of this mechanism, recall some results concerning the behavior of…
Mott's variable range hopping (v.r.h.) is the phonon-induced hopping of electrons in disordered solids (such as doped semiconductors) within the regime of strong Anderson localization. It was introduced by N.~Mott to explain the anomalous…
We analize electrical conductivity controlled by hopping of bound spin polarons in disordered solids with wide distributions of electron energies and polaron shifts (barriers). By means of percolation theory and Monte Carlo simulations we…
A semi-phenomenological theory of variable-range hopping (VRH) is developed for two-dimensional (2D) quasi-one-dimensional (quasi-1D) systems such as arrays of quantum wires in the Wigner crystal regime. The theory follows the phenomenology…
On the basis of the Kubo-Luttinger linear response theory combined with the scaling theory of Anderson localization predicting the energy dependence of localization length near the mobility edge, we have studied the thermoelectric response…
For the low-temperature electrical conductance of a disordered {\it quantum insulator} in $d$-dimensions, Mott \cite{mott} had proposed his Variable Range Hopping (VRH) formula, $G(T) = G_0 {\rm exp}[-(T_0/T)^{\gamma}]$, where $G_0$ is a…
We employ ultracold atoms with controllable disorder and interaction to study the paradigmatic problem of disordered bosons in the full disorder-interaction plane. Combining measurements of coherence, transport and excitation spectra, we…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
We show that interference experiments can be used to identify the spin-incoherent regime of strongly interacting one-dimensional conductors. Two qualitative signatures of spin-incoherence are found: a strong magnetic field dependence of the…
The behavior of a disordered amorphous thin film of superconducting Indium Oxide has been studied as a function of temperature and magnetic field applied perpendicular to its plane. A superconductor-insulator transition has been observed,…
We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random…
We investigate theoretically the effect of a finite electric field on the resistivity of a disordered one-dimensional system in the variable-range hopping regime. We find that at low fields the transport is inhibited by rare fluctuations in…
We use a mean-field (Hartree-like) approach to study the conductance of a strongly localized electron system in two dimensions. We find a crossover between a regime where Coulomb interactions modify the conductance significantly to a regime…
We have used the Stochastic Series Expansion quantum Monte Carlo method to study interacting hard-core bosons on the square lattice, with pair-hopping processes supplementing the standard single-particle hopping. Such pair hopping arises in…
We study the effects of long-range hopping and long-range inter-particle interactions on quantum walk of hard-core bosons in ideal and disordered one-dimensional lattices. We find that the range of hopping has a much more significant effect…
We consider a Bose-Hubbard model with an arbitrary hopping term and provide the boundary of the insulating phase thereof in terms of third-order strong coupling perturbative expansions for the ground state energy. In the general case two…
We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the…
Many-body localization in an $XY$ model with a long-range interaction is investigated. We show that in the regime of a high strength of disordering compared to the interaction an off-resonant flip-flop spin-spin interaction (hopping)…