Related papers: Voltage controlled terahertz transmission through …
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs…
We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit.…
Terahertz (THz) transmission spectra have been measured as function of temperature and magnetic field on single crystals of Cu3Bi(SeO3)2O2Br. In the time-domain THz spectra without magnetic field, two resonance absorptions are observed…
We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$),…
The strong light-matter interaction in graphene over a broad frequency range has opened up a plethora of photonics applications of graphene. The goal of this paper is to present the voltage tunability of plasmons in gated single- and…
Terahertz technology has made significant advances in the fields of spectroscopy, imaging and, more recently, wireless communications. In the latter, the use of this frequency band between 0.1 and 10 THz becomes extremely attractive due to…
The growth-diection quantization of confined electron gas in a GaAs/AlGaAs based quantum well structure is obtained in the Kohn-Sham iterative computational scheme. The longitudinal conductance at low temperatures, in the presence of…
The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…
We study the electrical tunability of ultrastrong light-matter interactions between a single terahertz circuit-based complementary split ring resonator (cSRR) and a two-dimensional electron gas. For this purpose, transmission spectroscopy…
Time-resolved terahertz spectroscopy is used to investigate formation and ultrafast long-distance propagation of electron-hole plasma in strongly photoexcited GaAs and InP. The observed phenomena involve fundamental interactions of…
We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude…
Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed…
Terahertz-band (100 GHz-10 THz) communication is a promising radio technology envisioned to enable ultra-high data rate, reliable and low-latency wireless connectivity in next-generation wireless systems. However, the low transmission power…
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist,…
Ultrafast charge transport in strongly biased semiconductors is at the heart of highspeed electronics, electro-optics, and fundamental solid-state physics. Intense light pulses in the terahertz (THz) spectral range have opened fascinating…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a…