Related papers: Electrical detection of optically pumped spin pola…
Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron…
Helicity-dependent photocurrent delta-I has been detected successfully under experimental configuration that a circularly polarized light beam is impinged with a right angle on a cleaved sidewall of the Fe/x-AlOx/GaAs-based n-i-p…
A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and demonstrated at room temperature. The light shed horizontally on the side of the device is refracted and introduced directly into a thin…
In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the…
The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin…
We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin…
Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of circularly-polarized light in bulk Ge generates a…
Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers.…
Optical spin orientation and depolarization phenomena in semiconductors are of overwhelming importance for the development of spin-optoelectronics. In this paper we employ Ge-based spin-photodiodes to investigate the room temperature…
The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional…
We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…
We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle…
Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…
Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a…
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by…
The photon helicity may be mapped to a spin-1/2, whereby we put forward an intrinsic interaction between a polarized light beam as a ``photon spin current'' and a pure spin current in a semiconductor, which arises from the spin-orbit…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that…
We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…
We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin…