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A new class of nano-structure devices is suggested, based on interference from the order parameter phase gradient of a single superconductor (S) in contact with a single normal metallic lead (N). By solving the Bogoliubov - de Gennes…
A new analytical expression for the size-dependent bandgap of colloidal semiconductor nanocrystals is proposed within the framework of the finite-depth square-well effective mass approximation in order to provide a quantitative description…
The ballistic conductance through a device consisting of quantum wires, to which two stubs are attached laterally, is calculated assuming parabolic confining potentials of frequencies $\omega_w$ for the wires and $\omega_s$ for the stubs.…
The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…
A one-dimensional, two-channel quantum wire is studied in the effective non-Hermitian Hamiltonian framework. Analytical expressions are derived for the band structure of the isolated wire. Quantum states and transport properties of the wire…
Ballistic quantum wires are exposed to longitudinal profiles of perpendicular magnetic fields composed of a spike (magnetic barrier) and a homogeneous part. An asymmetric magnetoconductance peak as a function of the homogeneous magnetic…
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large…
We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…
We study the curvature-induced bound states and the coherent transport properties for a particle constrained to move on a truncated cone-like surface. With longitudinal hard wall boundary condition, the probability densities and spectra…
The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting…
We investigate the impact of electrostatics on the proximity effect between a magnetic insulator and a semiconductor wire in semiconductor-superconductor-magnetic insulator hybrid structures. By performing self-consistent Schr$\ddot{\rm…
Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…
The effect of deconfinement due to finite band offsets on transport through quantum wires with two constrictions is investigated. It is shown that the increase in resonance linewidth becomes increasingly important as the size is reduced and…
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional…
The structure of the Meissner effect in a current-carrying cylindrical wire with arbitrary disorder is studied using a numerical procedure that is exact within the semiclassical approximation. A distribution of currents is found that is…
Coherent electron transport through a quantum channel in the presence of a general extended scattering potential is investigated using a T-matrix Lippmann-Schwinger approach. The formalism is applied to a quantum wire with Gaussian type…
We have derived and analyzed the wavefunctions and energy states for an asymmetric double quantum wells, broadened due to static interface disorder effects, within well known discreet variable representation approach for solving the…
We formulate a new theory for how caging constraints in glass-forming liquids at a surface or interface are modified and then spatially transferred, in a layer-by-layer bootstrapped manner, into the film interior in the context of the…
The elastic energy of a bending-resistant interface depends both on its geometry and its material composition. We consider such a heterogeneous interface in the plane, modeled by a curve equipped with an additional density function. The…
Recent advances in experimental and computational techniques have allowed for an accurate description of the adsorption of ionic liquids on metallic electrodes. It is now well established that they adopt a multi-layered structure, and that…