Related papers: Magnetization dependent current rectification in (…
In tunnel junctions of which at least one side is a ferromagnet, very large magnetic polarization change ($\approx 0.1 \mu_B$) and splitting of the spin up and spin down Fermi energy ($\approx 0.1 eV$) can be created under steady state…
Magnetotunnelling spectroscopy of resonant tunnelling structures provides information on the nature of the two-dimensional electron gas in the well. We describe a model based on nonequilibrium Green's functions that allows for a…
We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the…
Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies…
We fabricated a quantum dot coupled laterally to a two-dimensional electron gas and vertically to a three-dimensional electron gas in order to investigate the eigenstate dependence of tunneling rate to these gases. We observed a…
Spin-split superconductors exhibit an electron-hole asymmetric spin-resolved density of states, but the symmetry is restored upon averaging over spin. On the other hand, asymmetry appears again in tunneling junctions of spin-split…
Here, we present an analytical and numerical model describing the magnetization dynamics in MgO-based spin-torque nano-oscillators with an in-plane magnetized polarizer and an out-of-plane free layer. We introduce the spin-transfer torque…
Spin-dependent electronic transport in magnetic double-island devices is considered theoretically in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
The properties of diluted Ga$_{1-x}$Mn$_x$As are calculated for a wide range of Mn concentrations within the local spin density approximation of density functional theory. M\"ulliken population analyses and orbital-resolved densities of…
The interaction of externally applied currents with persistent currents induced by magnetic field in a mesoscopic triangle is investigated. As a consequence of the superposition of these currents, clear voltage rectification effects are…
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of…
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and…
We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction due to enhanced electron-electron interaction the electrical diffusion…
A minimal model for coherent transport through a donor/acceptor molecular junction is presented. The two donor and acceptor sites are described by single levels energetically separated by an intramolecular tunnel barrier. In the limit of…
An effect is considered of alternating (high-frequency) current on the spin-valve type magnetic junction configuration. The stability with respect to small fluctuations is investigated in the macrospin approximation. When the current…
We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does…
We calculate the current as a function of applied voltage in non-topological s-wave superconductor-quantum dot-topological superconductor tunnel junction. We consider the type of TS which hosts two Majorana bound states (MBS) at the ends of…