English
Related papers

Related papers: Self-limited oxide formation in Ni(111) oxidation

200 papers

A modified electron beam evaporator has been used judiciously to synthesize TiN thin films with (111) preferred orientation. This new design involved in creating local plasma by accelerating the secondary electrons emitted from the…

Materials Science · Physics 2014-10-16 R. Ramaseshan , Feby Jose , S. Rajagopalan , S. Dash

The elementary processes during the fixation of nitrogen by plasma catalysis are studied in a low-pressure plasma experiment using N$_2$ and O$_2$ as source gases. The formation of surface groups on an iron oxide foil are monitored with…

Plasma Physics · Physics 2025-05-14 S. C. L. Vervloedt , A. von Keudell

Thin films of the correlated transition-metal oxide LaNiO$_3$ undergo a metal-insulator transition when their thickness is reduced to a few unit cells. Here, we use angle-resolved photoemission spectroscopy to study the evolution of the…

Strongly Correlated Electrons · Physics 2020-06-16 Edoardo Cappelli , Willem Tromp , Siobhan McKeown Walker , Anna Tamai , Marta Gibert , Felix Baumberger , Flavio Y. Bruno

Enhanced (001) anomalous scattering by YBa2Cu3O7-d 50 nm films on SrTiO3 substrates with and without a grain boundary versus temperature is interpreted using crystallographic weights to distinguish it from total electron yield and…

Superconductivity · Physics 2007-05-23 J. V. Acrivos

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by…

Materials Science · Physics 2008-11-24 J. Farjas , C. Rath , A. Pinyol , P. Roura , E. Bertran

The controversy regarding the precise nature of the high-temperature phase of 1T-TiSe2 lasts for decades. It has intensified in recent times when new evidence for the excitonic origin of the low-temperature charge-density wave state started…

Silicon thin films for coverages ($\theta$) between 0.3 and 3 monolayers have been grown on rutile \ce{TiO2}(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and…

Materials Science · Physics 2011-06-03 J. Abad , C. Gonzalez , P. L. de Andres , E. Roman

Nanocomposite thin films of Zinc Oxide and Silicon were grown by co-evaporating powdered ZnO and Si. This resulted in nanocrystallites of ZnO being embedded in Silicon. The mismatch in crystal structures of constituent materials result in…

Materials Science · Physics 2009-11-13 Shabnam Siddiqui , Chhaya Ravi Kant , P. Arun , N. C. Mehra

Identification of kinetic and thermodynamic factors that control crystal nucleation and growth represents a central challenge in materials synthesis. Here we report that apparently defect-free growth of La$_2$MnNiO$_6$ (LMNO) thin films…

Brownian thermal noise of thin-film coatings is a fundamental limit for high-precision experiments based on optical resonators such as gravitational-wave interferometers. Here we present the results of a research activity aiming to develop…

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600…

Materials Science · Physics 2016-06-28 C. Rodenbücher , E. Hildebrandt , K. Szot , S. U. Sharath , J. Kurian , P. Komissinskiy , U. Breuer , R. Waser , L. Alff

Thick (~50 nm) films of Hf were evaporated onto bare and oxidized Si(001) samples, and thin (~monolayer) films of Hf were evaporated onto clean Si(001)-(2x1) surfaces. Upon annealing to 1000$^/circ$C, films of HfSi2 were formed after…

Materials Science · Physics 2007-05-23 H. T. Johnson-Steigelman , A. V. Brinck , P. F. Lyman

Low Energy Ion Scattering (LEIS) was employed to study the surface composition of thin films of Ru on B, C and B4C films at different stages of growth. Effects of surface segregation of C were observed. Previously unknown matrix effects…

Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through…

Zinc oxide (ZnO) epitaxial thin films grown on c-sapphire substrates by pulsed laser deposition were investigated using angle and polarization-resolved photoluminescence spectroscopy. Side-emission spectra differed significantly from…

Mesoscale and Nanoscale Physics · Physics 2013-07-04 Roy Aad , Laurent Divay , Aurelien Bruyant , Sylvain Blaize , Christophe Couteau , Dave John Rogers , Gilles Lerondel

We investigate the synthesis of 340-nm-thick Sc$_x$Al$_{1-x}$N layers with $0 \leq x \leq 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN nucleation layer under conditions giving rise to…

Materials Science · Physics 2024-11-25 Duc V. Dinh , Zhuohui Chen , Oliver Brandt

We suggest that the lithiation of pristine SnO forms a layered Li$_\text{X}$O structure while the expelled tin atoms agglomerate into 'surface' planes separating the Li$_\text{X}$O layers. The proposed lithiation model widely differs from…

Computational Physics · Physics 2015-03-17 Andreas Pedersen , Mathieu Luisier

Using neutron scattering, we investigate the static and dynamic structure functions $S(Q,\omega)$ of 3 distinct solid phases (using powder average techniques), and characterize the corresponding modes of energy excitation, focusing…

Materials Science · Physics 2011-03-29 C. -Y. Liu , C. M. Lavelle , C. M. Brown

A recent report [Kiguchi {\it et al.}, Phys. Rev. B {\bf 68}, 115402 (2003)] that the (111) surface of 5 MgO layers grown epitaxially on Ag(111) becomes metallic to reduce the electric dipole moment raises a question of what will happen…

Materials Science · Physics 2009-11-10 Ryotaro Arita , Yoshiaki Tanida , Shiro Entani , Manabu Kiguchi , Koichiro Saiki , Hideo Aoki

We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {\deg}C. In contrast to previous…