Related papers: Comment on "Shallow donor states near a semiconduc…
The ground state energy and the extend of the wavefunction of a negatively charged donor (D-) located near a semiconductor-metal or a semiconductor-dielectric interface is obtained. We apply the effective mass approximation and use a…
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative…
Exchange interactions among defects in semiconductors are commonly treated within effective-mass theory using a scaled hydrogenic wave-function. However such a wave-function is only applicable to shallow impurities; here we present a simple…
We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented,…
Accurate prediction of shallow-donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies. Traditional beyond-DFT approaches (e.g., hybrid functionals, GW) are prohibitively…
We carry out a detailed investigation of neutral ($D^0$) and charged ($D^-$) impurity states of hydrogen-like donors in spherical semiconductor quantum dots. The investigation is carried out within the effective mass theory (EMT). We take…
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical…
Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study…
The late stages of large-scale structure evolution are treated semi-analytically within the framework of modified halo model. We suggest simple yet accurate approximation for relating the non-linear amplitude to linear one for spherical…
The insulator-to-metal transition in dense fluid hydrogen is an essential phenomenon to understand gas giant planetary interiors and the physical and chemical behavior of highly compressed condensed matter. Using fast laser spectroscopy…
Electronic structure calculations for compressed molecular hydrogen are performed to provide more insight into the diversity of phenomena recently observed experimentally. We perform full-potential LAPW calculations and analyze them in…
The Coulomb gap in a donor-acceptor model with finite charge transfer energy $\Delta$ describing the electronic system on the dielectric side of the metal-insulator transition is investigated by means of computer simulations on two- and…
We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also…
The wave function and binding energy for shallow donors in GaAs are calculated within the tight binding (TB) approach, for supercells containing up to two million atoms. The resulting solutions, coupled with a scaling law, allow…
Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
We investigate the frontier between classical and quantum plasmonics in highly doped semiconductor layers. The choice of a semiconductor platform instead of metals for our study permits an accurate description of the quantum nature of the…
The interactions between acceptors in semiconductors are often treated in qualitatively the same manner as those between donors. Acceptor wave functions are taken to be approximately hydrogenic and the standard hydrogen molecule…
We present a direct spectroscopic observation of a shallow hydrogen-like muonium state in SrTiO$_3$ which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this…
We present a new method for calculating electronic states in low-dimensional semiconductor heterostructures, which is based on the real-space Hamiltonian in the envelope function approximation. The numerical implementation of the method is…