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At low temperatures, iron monosilicide is a strongly correlated narrow-gap semiconductor. A first order transition to metal state induced by magnetic field was observed for the first time at 355 T in Ref. [Yu. B. Kudasov et al., JETP Lett.…

Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…

It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…

Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid…

The integration of miniaturized optical spectrometers into mobile platforms will have an unprecedented impact on applications ranging from unmanned aerial vehicles (UAVs) to mobile phones. To address this demand, silicon photonics stands…

We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage…

Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for…

Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses.…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…

In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications.…

Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…

We report fabrication and characteristics of an organic monolayer based Metal Oxide Semiconductor (MOS) device. In place of SiO2 oxide layer in the MOS configuration, we used 1H, 1H, 2H, 2H- perfluorooctyl trichlorosilane (FOTS)…

The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration…

We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian…

Scalability in the fabrication and operation of quantum computers is key to move beyond the NISQ era. So far, superconducting transmon qubits based on aluminum Josephson tunnel junctions have demonstrated the most advanced results, though…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…

A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…