Related papers: Band Structure Engineering of Multinary Chalcogeni…

Topological nontrivial nature are the latest phases to be discovered in condensed matter physics with insulating bulk band gaps and topologically protected metallic surface states; they are one of the current hot topics because of their…

Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap…

Single-crystalline \beta-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport…

We calculate the photonic band gap of triply periodic bicontinuous cubic structures and of tubular structures constructed from the skeletal graphs of triply periodic minimal surfaces. The effect of the symmetry and topology of the periodic…

We report a detailed experimental study of the band structure of the recently discovered topological material $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$. Using the combination of scanning tunneling spectroscopy and angle-resolved…

Bound electron pairs (BEPs) with energy in the band gap are interesting because they can participate in charge and spin transport in modern topologically nontrivial materials. We address the problem of their stability and study the…

Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal…

The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low…

We present an electronic structure calculation of the valence band for some II--VI binary/ternary alloy interfaces. We use the empirical tight-binding method and the surface Green's function matching method. For the ternary alloys we use…

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

Based on first principles calculations, we predicate that Bi on a graphene derivate, $g$-C$_{14}$N$_3$, which involves a $3\times 3$ unit cell of graphene with four C atoms substituted by three N atoms, is a topological insulator with a gap…

The discovery of strong topological insulators led to enormous activity in condensed matter physics and the discovery of new types of topological materials. Bisumth based chalcogenides are exemplary strong three dimensional topological…

We perform systematic investigation on the geometric, energetic and electronic properties of group IV-VI binary monolayers (XY), which are the counterparts of phosphorene, by employing density functional theory based electronic structure…

When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular…

A large bulk band gap is critical for the applications of quantum spin hall (QSH) insulators in spintronics at room temperature. Based on first-principles calculations, we predict that the methyl-functionalized III-Bi monolayers, namely…

It has been proposed that disorder may lead to a new type of topological insulator, called topological Anderson insulator (TAI). Here we examine the physical origin of this phenomenon. We calculate the topological invariants and density of…

Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration $N \sim 10^{19}$…

We present our investigations on the superconducting properties of monolayers of FeSe$_{0.5}$Te$_{0.5}$ grown on the 3D topological insulator Bi$_{2}$Se$_{1.2}$Te$_{1.8}$ using low temperature scanning tunneling spectroscopy (STS). While…

The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in…

Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a…