Related papers: Quantum coherent negative bend resistance in InSb …
Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and…
The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted…
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a…
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
Recent cold atom experiments have observed bad and strange metal behaviors in strongly-interacting Fermi-Hubbard systems. Motivated by these results, we calculate the thermoelectric transport properties of a 2D Fermi-Hubbard system in the…
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at…
Coulomb blockade phenomena and quantum fluctuations are studied in mesoscopic metallic tunnel junctions with high charging energies. If the resistance of the barriers is large compared to the quantum resistance, transport can be described…
This work investigates the quantum transport in a narrow constriction acted upon by a finite-range transversely polarized time-dependent electric field. A generalized scattering-matrix method is developed that has incorporated a…
Magnetoresistance oscillations were observed on networks of superconducting ultrathin Nb nanowires presenting evidences of either thermal or quantum activated phase slips. The magnetic transport data, discussed in the framework of different…
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…
We have studied the quantum transport in a narrow constriction acted upon by a finite-range longitudinally polarized time-dependent electric field. The electric field induces coherent inelastic scatterings which involve both intra-subband…
We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished…
Transport properties in mesoscopic networks are investigated, where the strength of the (Rashba-type) spin-orbit coupling is assumed to be tuned with external gate voltages. We analyze in detail to what extent the ideal behavior and…
Finite-temperature T>0 transport properties of integrable and nonintegrable one-dimensional (1D) many-particle quantum systems are rather different, showing in the metallic phases ballistic and diffusive behavior, respectively. The…
We investigate quantum transport in aligned carbon nanotube (CNT) fibers fabricated via solution spinning, focusing on the roles of structural dimensionality and quantum interference effects. The fibers exhibit metallic behavior at high…
In transport experiments the quantum nature of matter becomes directly evident when changes in conductance occur only in discrete steps, with a size determined solely by Planck's constant h. The observations of quantized steps in the…
Quasi-one-dimensional materials $A$Mn$_6$Bi$_5$ ($A$ = Na, K, Rb, Cs) exhibit unique electronic behaviors such as antiferromagnetism, charge density waves, and pressure-induced superconductivity. Thus, they serve as a suitable model system…
We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly…
We study the charge transport across a band-tuned metal-insulator transition in two dimensions. For high temperatures $T$ and chemical potentials $\mu$ far from the transition point, conduction is ballistic and the resistance $R(T)$…