Related papers: Anomalous Hall effect in NiPt thin films
Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn…
A series of thin films Fe$_{4-x}$Ge$_x$N (x=0-1) was fabricated onto MgO substrates by magnetron sputtering with the aim of studying the possible enhancement of the anomalous Nernst effect (ANE), envisaged based on Density Functional Theory…
Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt…
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation…
The influence of the in-plane anisotropy on the magnetization of a nanogranular film with perpendicular anisotropy has been studied. It is shown that if a magnetic field is tilted with respect to the film normal, a critical transition from…
Near the superconducting phase transition, fluctuations significantly modify the electronic transport properties. Here we study the fluctuation corrections to the Hall conductivity in disordered films, extending previous derivations to a…
The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity…
The origin of simultaneous electronic, structural and magnetic transitions in bulk rare-earth nickelates ($RE$NiO$_3$) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure…
We demonstrate precise control of magnetism in MnBi2Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures,…
Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An…
The effect of random competing single-ion anisotropies in antiferromagnets was studied using epitaxial Mn$_x$Ni$_{1-x}$F$_2$ antiferromagnetic thin film alloys grown via molecular beam epitaxy. The crystal structure of this material is…
The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of…
We report the planar and anomalous Nernst effect in epitaxial thin films of spin polarized La2/3Sr1/3MnO3. The thermal counterpart of the anomalous Hall effect in this material (i.e. the anomalous Nernst effect) shows a extreme sensitivity…
We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator Tm3Fe5O12 films grown with pulsed laser deposition on substituted-Gd3Ga5O12 substrate which maximizes the tensile…
Antiferromagnetic Weyl semimetals with spin chirality offer excellent platforms to address the Berry phase physics, which manifests prominently in several of their electro-optical and electro-magnetic responses including as a large…
In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple…
A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…
Here we investigate the temperature dependence of anomalous Hall effect in Hf/GdFeCo/MgO sheet film and Hall bar device. The magnetic compensation temperature ($T_{comp}$) for the sheet film and device is found to be ~240 K and ~118 K,…
The sign change in the Hall conductivity has been studied in thin amorphous Nb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above…
The two dimensional kagome spin lattice structure of Mn atoms in the family of Mn$_3$X non-collinear antiferromagnets are providing substantial excitement in the exploration of Berry curvature physics and the associated non-trivial…