Related papers: Step velocity tuning of SrRuO3 step flow growth on…
Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow…
We study the step bunching kinetic instability in a growing crystal surface characterized by anisotropic diffusion. The instability is due to the interplay between the elastic interactions and the alternation of step parameters. This…
It is shown that step moving to meet solution flow can be unstable against lateral perturbations. The instability of long-wavelength perturbations occurs at values of the solution flow intensity less than some critical value depending on…
The sequence of ground states for SrTiO3 film subjected to epitaxial strain as well as to mechanical stress along the [001] and [110] axes is calculated from first principles within the density functional theory. Under the fixed-strain…
By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs…
Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…
A uniform one-unit-cell-high step on the SrTiO3 substrate is a prerequisite for growing high-quality epitaxial oxide heterostructures. However, it is inevitable that defects induced by mixed substrate surface termination exist at the…
We approach the old-standing problem of vicinal crystal surfaces destabilized by step-down and step step-up currents from a unified modelling viewpoint with focus on both the initial and the intermediate stages of the instability. We…
Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along…
The morphology of a growing crystal surface is studied in the case of an unstable two-dimensional step flow. Competition between bunching and meandering of steps leads to a variety of patterns characterized by their respective instability…
We study the step meandering instability on a surface characterized by the alternation of terraces with different properties, as in the case of Si(001). The interplay between diffusion anisotropy and step stiffness induces a finite…
The steps at the crystal surfaces could be transparent for the migrating adatoms. In the case of significant transparency the velocity of a given step in a given moment is affected by detachment of atoms from rather distant steps in rather…
We consider the growth of a vicinal crystal surface in the presence of a step-edge barrier. For any value of the barrier strength, measured by the length l_es, nucleation of islands on terraces is always able to destroy asymptotically…
We study the evolution of step bunches on vicinal surfaces using a thermodynamically consistent step-flow model that (i) circumvents the quasistatic approximation that prevails in the literature by accounting for the dynamics of adatom…
Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a…
We devise a new 1D atomistic scale model of vicinal growth based on Cellular Automaton. In it the step motion is realized by executing the automaton rule prescribing how adatoms incorporate into the vicinal crystal. Time increases after…
Step meandering instability in a Burton-Cabrera-Frank (BCF)-type model for the growth of an isolated, atomically high step on a crystal surface is analyzed. It is assumed that the growth is sustained by the molecular precursors deposition…
Homoepitaxial step-flow growth of high-quality $\beta$-Ga$_{2}$O$_{3}$ thin films is essential for the advancement of high-performance Ga$_{2}$O$_{3}$-based devices. In this work, the step-flow growth mechanism of $\beta$-Ga$_{2}$O$_{3}$…
Kinetic Monte Carlo simulation in conjunction with molecular dynamics simulation is utilized to study the effect of the steered deposition on the growth of Cu on Cu(1,1,17). It is found that the deposition flux becomes inhomogeneous in step…
This work provides a ground for a quantitative interpretation of experiments on step bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier in the regime of weak desorption. A strong step bunching…