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We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide…

We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within…

Mesoscale and Nanoscale Physics · Physics 2018-09-27 Saurav Islam , Semonti Bhattacharyya , Abhinav Kandala , Anthony Richardella , Nitin Samarth , Arindam Ghosh

We report a detailed investigation of low-frequency resistance fluctuations (1/f noise) in chemical vapor deposition (CVD) grown graphene. Systematic measurements reveal that the magnitude of 1/f noise in CVD-grown graphene is significantly…

Mesoscale and Nanoscale Physics · Physics 2026-03-17 Jagadis Prasad Nayak , Smrutirekha Sahoo , Shreya Barman , Gopi Nath Daptary

We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 Guanxiong Liu , Sergey Rumyantsev , Michael Shur , Alexander A. Balandin

Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and…

Instrumentation and Detectors · Physics 2021-09-07 Nikolai Beev

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…

Transient reflectivity traces measured for nanometer-sized films of the topological insulator Bi2Se3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort laser pulses of 1.51 eV photon…

Mesoscale and Nanoscale Physics · Physics 2015-05-20 Yuri D. Glinka , Sercan Babakiray , Trent A. Johnson , Mikel B. Holcomb , David Lederman

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…

Materials Science · Physics 2015-05-14 G. Liu , W. Stillman , S. Rumyantsev , Q. Shao , M. Shur , A. A. Balandin

We report on "graphene-like" mechanical exfoliation of single-crystal Bi2Te3 films and thermoelectric characterization of the stacks of such films. Thermal conductivity of the resulting "pseudo-superlattices" was measured by the "hot disk"…

Materials Science · Physics 2015-05-19 Vivek Goyal , Desalegne Teweldebrhan , Alexander A. Balandin

We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de…

Microwave circuit electrodynamics of disordered superconductors is a very active research topic spawning a wide range of experiments and applications. For compact superconducting circuit elements, the transition to an insulating state poses…

We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given…

Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition.…

Mesoscale and Nanoscale Physics · Physics 2015-06-16 Alexander A. Balandin

We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 S. L. Rumyantsev , C. Jiang , R. Samnakay , M. S. Shur , A. A. Balandin

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which…

Mesoscale and Nanoscale Physics · Physics 2010-06-09 Atindra Nath Pal , Arindam Ghosh

We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 J. Khan , C. M. Nolen , D. Teweldebrhan , D. Wickramaratne , R. K. Lake , A. A. Balandin

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred…

We use scanning tunneling microscopy and spectroscopy under ultra-high vacuum and down to 1.7 K to study the local variations of the chemical potential on the surface of the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films…

Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$\alpha$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance…

Mesoscale and Nanoscale Physics · Physics 2023-04-18 A. Schmitt , D. Mele , M. Rosticher , T. Taniguchi , K. Watanabe , C. Maestre , C. Journet , V. Garnier , G. Fève , J. M. Berroir , C. Voisin , B. Plaçais , 1 , E. Baudin

We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 R. Samnakay , C. Jiang , S. L. Rumyantsev , M. S. Shur , A. A. Balandin
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