Related papers: Hall effect of FeTe and Fe(Se_1-x_Te_x_) thin film…
The sign change in the Hall conductivity has been studied in thin amorphous Nb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above…
The FeSe superconductor and its related systems have attracted much attention in the iron-based superconductors owing to their simple crystal structure and peculiar electronic and physical properties. The bulk FeSe superconductor has a…
The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane…
The antiferromagnetic ground state and the metamagnetic transition to the ferromagnetic state of CsCl-ordered FeRh epilayers have been characterized using Hall and magnetoresistance measure- ments. On cooling into the ground state, the…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report the successful synthesis of iron-based superconductor…
Granular metals offer tailorable electronic properties and play crucial roles in device and sensor applications. We have fabricated a series of nonmagnetic granular CoSi2 thin films and studied the Hall effect and transport properties. We…
Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…
We report a systematic investigation, together with a theoretical analysis, of the resistivity and Hall effect in single crystals of Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$, over a wide doping range. We find a surprisingly great disparity…
We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for…
Non-Fermi liquids are strange metals whose physical properties deviate qualitatively from those of conventional metals due to strong quantum fluctuations. In this paper, we report transport measurements on the FeSe$_{1-x}$S$_x$…
We have investigated the resistivity ($\rho$), thermoelectric power (TEP) and Hall coefficient ($R_{H}$) on high quality single crystals of REFe$_{4}$P$_{12}$. TEP in CeFe$_{4}$P$_{12}$ is extremely large ($\sim$ 0.5mV/K at 290K) with a…
A normal metallic system proximitized by a superconductor can exhibit a gapless superconducting state characterized by segmented Fermi surfaces, as confirmed experimentally. In such a state, quasiparticle states remain gapless along one…
Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
The Hall coefficient (R_H) of high-Tc cuprates in the normal state shows the striking non-Fermi liquid behavior: R_H follows a Curie-Weiss type temperature dependence, and |R_H|>>1/|ne| at low temperatures in the under-doped compounds.…
We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…