Related papers: Observation of the "Memory Steps" in Graphene at E…
We propose, for the first time, a valley Seebeck effect in gate tunable zigzag graphene nanoribbons as a result of the interplay between thermal gradient and valleytronics. A pure valley current is further generated by the thermal gradient…
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…
Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in…
We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of…
The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not…
We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…
We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external dipoles on graphene free surface and the localized states…
The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover,…
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…
We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by…
Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for…
A reversible handle on graphene carrier density, other than the gate electric field, is desirable for memory applications of graphene. Our experiments show that the commonly observed carrier density hysteresis in graphene on SiO$_2$ due to…
The AC Josephson effect manifests itself in the form of "Shapiro steps" of quantized voltage in Josephson junctions subject to RF radiation. This effect presents an early example of a driven-dissipative quantum phenomenon and is presently…
The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong…
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…
We demonstrate top-gated field effect transistor made of reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. Raman spectrum of RGO flakes of typical size of 5{\mu}m x 5{\mu}m show a single 2D band at 2687 cm-1,…
The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…
Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a…
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…
Low frequency dielectric measurements on plexiglass (PMMA) show that cooling and heating the sample at constant rate give an hysteretic dependence on temperature of the dielectric constant $\epsilon$. A temporary stop of cooling produces a…