Related papers: Digital logic using 3-terminal spin transfer torqu…
The spin-dependent localization of electrons in quadruple quantum dots (QD's) has been studied by the configuration interaction method. We have investigated two nanodevices that consist of laterally coupled quadruple QD's. We have shown…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
The authors show how to implement a 4-state universal logic gate (NOR) using three strain-coupled magnetostrictive-piezoelectric multiferroic nanomagnets (e.g. Ni/PZT) with biaxial magnetocrystalline anisotropy. Two of the nanomagnets…
In magnetic materials nontrivial spin textures may emerge owing to the competition among different types of magnetic interactions. Among such spin textures, chiral magnetic solitons represent topologically protected spin configurations with…
A complete analytical prescription is given to perform three basic (OR, AND, NOT) and two universal (NAND, NOR) logic gates at nano-scale level using simple tailor made geometries. Two different geometries, ring-like and chain-like, are…
The growing demand for ultra low power computing and the emergence of quantum technologies have intensified interest in cryogenic electronics, particularly superconducting devices. Despite their promise, current controlled superconducting…
We propose an all spin state element to enable all spin state machines using spin currents and nanomagnets. We demonstrate via numerical simulations the operation of a state element a critical building block for synchronous, sequential…
Featuring low heat dissipation, devices based on spin-wave logic gates promise to comply with increasing future requirements in information processing. In this work, we present the experimental realization of a majority gate based on the…
Colloid-based computing devices offer remarkable fault tolerance and adaptability to varying environmental conditions due to their amorphous structure. An intriguing observation is that a colloidal suspension of ZnO nanoparticles in DMSO…
All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic input/output and spin transfer torque (STT) driven…
Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are…
Traditional silicon binary circuits continue to face challenges such as high leakage power dissipation and large area of interconnections. Multiple-Valued Logic (MVL) and nano devices are two feasible solutions to overcome these problems.…
Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…
We investigate the State-Controlled Cellular Neural Network (SC-CNN) framework of Murali-Lakshmanan-Chua (MLC) circuit system subjected to two logical signals. By exploiting the attractors generated by this circuit in different regions of…
We propose and develop a concept of magnonic logic gates enabling reversible computing. The gates consist of passive elements: waveguides, cross-junctions and phase shifters. Logical 0 and 1 are encoded in the relative phase of the…
As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve…
A device which converts analog magnetic signals directly into digital information is proposed. The device concept is based on the monostable-bistable transition logic element, which consists of two resonant tunneling diodes (load and…
We explore the possibilities of designing classical logic gates at nano-scale level using magnetic quantum rings. A single ring is used for designing OR, NOT, XOR, XNOR and NAND gates, while AND and NOR gate responses are achieved using two…
We propose and numerically analyze novel reconfigurable logic gates using "single-electron spin transistors" (SESTs), which are single-electron transistors (SETs) with ferromagnetic electrodes and islands. The output characteristics of a…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…