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We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view of the actual energy distribution of carriers. The key point…
In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one sub-band approximation and carrier degeneracy. The knowledge…
In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the…
The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…
We consider the electronic current through a one-dimensional conductor in the ballistic transport regime and show that the quantum oscillations of a weakly pinned single scattering target results in a temperature- and bias-voltage…
The contrast transfer function (CTF) is widely used to evaluate phase retrieval methods in scanning transmission electron microscopy (STEM), including center-of-mass imaging, parallax imaging, direct ptychography, and iterative…
Understanding charging mechanisms and charge retention dynamics of nanocrystal memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium nanocrystals embedded in a silicon oxide matrix…
The methods of Nicholson and Shain and Randles-Sevcik are the paradigms of voltammetry of redox species. However, as they were originally developed for aqueous redox couples, they cannot be directly applied to solid redox films such as…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and…
We present theoretical results for the backaction force noise and damping of a mechanical oscillator whose position is measured by a mesoscopic conductor. Our scattering approach is applicable to a wide class of systems; in particular, it…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
When using an electron microscope for imaging of particles embedded in vitreous ice, the objective lens will inevitably corrupt the projection images. This corruption manifests as a band-pass filter on the micrograph. In addition, it causes…
Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, the substitution of the interconnect wire…
In massive multiple-input multiple-output (MIMO) systems, the knowledge of the users' channel covariance matrix is crucial for minimum mean square error (MMSE) channel estimation in the uplink as well as it plays an important role in…
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap…
Significant temperature effects on the electrokinetic transport in a nanochannel with a slab geometry are demonstrated using a molecular dynamics (MD) model. A system consisting of Na+ and Cl- ions dissolved in water and confined between…
We report on the existence of temperature induced negative differential conductivity (NDC) for electrons in gaseous nitrogen. The important role of superelastic rotational collisional processes in this phenomenon is highlighted. A model…
We describe the design and current performance of the high-flux backscattering spectrometer located at the NIST Center for Neutron Research. The design incorporates several state-of-the-art neutron optical devices to achieve the highest…
The present work is related to the study of the nitrogen gas flow through diverging micro and nano-channels. The direct simulation Monte-Carlo (DSMC) method has been used to study the flow. The Simplified Bernoulli Trials (SBT) collision…