Related papers: Conduction Electron Scattering and Spin-Flipping a…
We systematically studied the magnetoresistance effect in a Pt/(CoNi)n multilayer system with perpendicular magnetic anisotropy and the fcc (111) texture. The angular dependence of magnetoresistance, including high-order cosine terms, was…
The in-plane lattice constants of close-packed planes of fcc and hcp Ni and Co match that of graphite almost perfectly so that they share a common two dimensional reciprocal space. Their electronic structures are such that they overlap in…
We investigate boundary multifractality of critical wave functions at the Anderson metal-insulator transition in two-dimensional disordered non-interacting electron systems with spin-orbit scattering. We show numerically that multifractal…
We performed angular and temperature-dependent electron-spin-resonance measurements in the quasi-two-dimensional organic conductor $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]I. The interlayer spin-diffusion is much weaker compared to the Cl- and…
In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM), interfacial spin orbit scattering leads to spin mixing of the two conducting channels of the FM, which results in an unconventional anisotropic magnetoresistance…
Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
We use neutron scattering to study the influence of a magnetic field on spin structures of Nd$_2$CuO$_4$. On cooling from room temperature, Nd$_2$CuO$_4$ goes through a series of antiferromagnetic (AF) phase transitions with different…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
We use current-perpendicular-to-plane (CPP) exchange-biased spin-valves to directly measure spin diffusion lengths lsf for N = Cu(2.1 at.%Ge) and Ag(3.6 at.%Sn) alloys. We find lsf(Cu2%Ge)) = 117+10-6 nm and lsf(Ag4%Sn)= 39 +/- 3 nm. The…
The spin mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in…
We present a quantitative theory of the gate-voltage tuned superconductor-to-insulator transition (SIT) observed experimentally in the 2D electron liquid created in the (111) interface between crystalline SrTiO_3 and LaAlO_3 . Considering…
Spin-valve based nanojunctions incorporating Co|Ni multilayers with perpendicular anisotropy were used to study spin-torque driven ferromagnetic resonance (ST-FMR) in a nonlinear regime. Perpendicular field swept resonance lines were…
We investigated the spin pumping damping contributed by paramagnetic layers (Pd, Pt) in both direct and indirect contact with ferromagnetic Ni$_{81}$Fe$_{19}$ films. We find a nearly linear dependence of the interface-related Gilbert…
High-temperature superconductivity in both the copper-oxide and the iron-pnictide/chalcogenide systems occurs in close proximity to antiferromagnetically ordered states. Neutron scattering has been an essential technique for characterizing…
We report the current-perpendicular-to-plane giant magnetoresistance of a spin valve with Co2MnSi (CMS) Heusler alloy ferromagnetic electrodes. A multilayer stack of Cr/Ag/Cr/CMS/Cu/CMS/Fe25Co75/Ir28Mn72/Ru was deposited on a MgO (001)…
We compute the spin-active scattering matrix and the local spectrum at the interface between a metal and a three-dimensional topological band insulator. We show that there exists a critical incident angle at which complete (100%) spin flip…
The spin-orbit field and interfacial exchange field are two major interface phenomena, and the detection and manipulation of these fields can enable a variety of nanoscale spintronics devices. Optimizing the interfacial exchange field,…
We have determined the spin-memory-loss parameter, $\delta_{Co/Ru}$, by measuring the transmission of spin-triplet and spin-singlet Cooper pairs across Co/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-Plane Giant…
Materials with strong spin orbit coupling (SOC) are essential for realizing spin orbit torque (SOT) based magnetic memory devices. Transition metal dichalcogenides (TMDs) are promising candidates for such appli cations because of their…