Related papers: Weak antilocalization effect of high-mobility two-…
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large…
The exchange interaction is investigated theoretically for electrons confined to a 2-D sample placed in a linearly varying magnetic field perpendicular to the plane. Unusual and interesting behavior is predicted: starting from zero, as one…
The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic…
We have used gated GaAs/AlGaAs heterostructures to explore nonlinear transport between spin-resolved Landau level (LL) edge states over a submicron region of two-dimensional electron gas (2DEG). The current I flowing from one edge state to…
A two dimensional electron gas on a cylindrical surface with a screw dislocation is considered. More precisely, we investigate how both the geometry and the deformed potential due to a lattice distortion affect the Landau levels of such…
We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the…
We examine within the self-consistent Thomas-Fermi-Poisson approach the low-temperature screening properties of a two-dimensional electron gas (2DEG) subjected to strong perpendicular magnetic fields. Numerical results for the unconfined…
We discuss properties of strongly correlated two-dimensional electron gas in semiconductor layers at low electron concentrations assuming that the electron liquid is close to crystalization. Analogy with the theory of 3He is emphasized.
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…
This work investigates the impact of the Sagnac effect on the thermodynamic properties of a non-interacting two-dimensional electron gas (2DEG) in a rotating sample under the influence of a uniform magnetic field. We derive an analytical…
We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly…
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis…
Magnetoresistance and Hall coefficient of a graphene layer are investigated in the presence of a tilted magnetic field. We consider the graphene layer is assembled by either another graphene layer or a two-dimensional electron gas (2DEG)…
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…
There has been intense recent interest in the two-dimensional electron gases (2DEGs) that form at the surfaces and interfaces of KTaO$_3$ (KTO), with the discovery of superconductivity at temperatures significantly higher than those of…
In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $\mu \approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we…
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to…
We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…
Theory of weak antilocalization is developed for high-mobility two-dimensional systems. Spin-orbit interaction of Rashba and Dresselhaus types is taken into account. Anomalous magnetoresistance is calculated in the whole range of…
Low energy excitations of a two-dimensional electron gas (2DEG) in modulation-doped multiple (ten) quantum wells (QWs) was studied using far-infrared magneto-transmission technique at liquid helium temperatures. A large distance between…