Related papers: High frequency limit for single-electron pumping o…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
Time periodic perturbations of an electron system on a ring are examined. For small frequencies periodic small amplitude perturbations give rise to side band currents which in leading order are inversely proportional to the frequency. These…
Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between…
We study the impact of off-resonant tunneling and coherences on the electron pumping through quantum dots. Thereby, we focus on two electron-pump setups where lowest-order tunneling processes are suppressed and the pump is exclusively…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
Tunneling of electrons through the barriers in heterostructures has been studied, within unified transfer matrix approach. The effect of barrier width on the transmission coefficient of the electrons has been investigated for different…
The tunneling through an opaque barrier with a strong oscillating component is investigated. It is shown, that in the strong perturbations regime (in contrast to the weak one), higher perturbations rate does not necessarily improve the…
We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable…
Electron counting of a single porphyrin molecule between two electrodes shows a crossover from sub- to super-Poissonian statistics as the bias voltage is scanned. This is attributed to the simultaneous activation of states with electron…
The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature…
Quantum pumping holds great potential for future applications in micro- and nanotechnology. Its main feature, dissipationless charge transport, is theoretically possible via several different mechanisms. However, since no unambiguous…
In this paper I study the posibility of inducing a single-electron current by rotating a non-magnetic conducting rod with a small tunnel junction immerse in a uniform magnetic field perpendicular to the plane of motion. I show first, by…
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function…
The phase of a single quantum state is undefined unless the history of its creation provides a reference point. Thus quantum interference may seem hardly relevant for the design of deterministic single-electron sources which strive to…
Electrons floating on the surface of liquid helium are possible spin-qubits for quantum information processing. Varying electric potentials are not expected to modify spin states, which allows their transport on helium using a…
We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons…
We propose an experiment to observe interference of a single electron as it is transported along two parallel quasi-one-dimensional channels trapped in a single minimum of a travelling periodic electric field. The experimental device is a…
Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed…
Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon…