Related papers: Imaging charge density fluctuations in graphene us…
We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…
We report room temperature scanning tunneling microscopy and spectroscopy study of bilayer graphene prepared by mechanical exfoliation on SiO$_2$/Si surface and electrically contacted with gold pads using a mechanical mask. The bulk…
It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate like quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a…
We present electronic transport measurements through short and narrow (30x30 nm) single layer graphene constrictions on a hexagonal boron nitride substrate. While the general observation of Coulomb-blockade is compatible with earlier work,…
The charge carrier density in graphene on a dielectric substrate such as SiO$_2$ displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near…
When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the…
The topological insulator BiSbTeSe$_2$ corresponds to a compensated semiconductor in which strong Coulomb disorder gives rise to the formation of charge puddles, i.e., local accumulations of charge carriers, both in the bulk and on the…
We investigate the contribution of charge puddles to the non-vanishing conductivity minimum in disordered graphene flakes at the charge neutrality point. For that purpose, we study systems with a geometry that suppresses the transmission…
The experimentally observed metal-to-insulator transition in hydrogenated graphene is numerically confirmed for actual sized graphene samples and realistic impurity concentrations. The eigenstates of our tight-binding model with…
We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such…
The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…
We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential…
We performed tunneling spectroscopy measurements of graphene coupled to niobium/niobium-nitride superconducting electrodes. Due to the proximity effect, the graphene density of states depends on the phase difference between the…
We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by…
Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the…
We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…
We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced…
We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…
The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport…