Related papers: Magnetoresistance in a High Mobility Two-Dimension…
We study the thermodynamics of degenerate electron and charged vector boson gases in very intense magnetic fields. In degenerate conditions of the electron gas, the pressure transverse to the magnetic field $B$ may vanish, leading to a…
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis…
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature…
We present magnetotransport measurements on freely suspended two-dimensional electron gases from AlGaAs/GaAs heterostructures. The technique to realize such devices relies on a specially MBE grown GaAs/AlGaAs-heterostructure including a…
The effect of a tilted dc magnetic field on the transport properties of a two dimensional electron gas (2DEG) is studied. The influence of the component of magnetic field parallel to the surface is analyzed and the dependence of the Fermi…
We report measurements of dm/dn in Si MOSFET, where m is the magnetization of the two-dimensional electron gas and n is its density. We extended the density range of measurements from well in the metallic to deep in the insulating region.…
The in-plane magnetic field suppresses the quantum coupling between electrons in a double quantum well structure. The microscopical theory of this effect is developed and confirmed experimentally. We have shown that the decrease of the…
An analytical study of the low-field magnetoresistance of a two-dimensional electron gas subject to a weak periodic modulation is presented. We assume small-angle impurity scattering characteristic for high-mobility semiconductor…
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a…
Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking- property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic electronic state is not yet fully…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these…
We report the response of electrical resistivity $\rho$ to the application of magnetic fields (H) up to 140 kOe in the temperature interval 1.8-300 K for the compound, Gd7Rh3, ordering antiferromagnetically below 150 K. We find that there…
A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore nontrivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional…
We consider the magnetic response of a two-dimensional electron gas (2DEG) with a spin-orbit interaction to a long-wave-length electromagnetic excitation. We observe that the transverse electric field creates spin polarization perpendicular…
The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, m$^{*}$ is an effective…
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…
We demonstrate a strong correlation between the magnetoresistive and the concurrent microwave reflection from the microwave photo-excited GaAs/AlGaAs two-dimensional electron system (2DES). These correlations are followed as a function of…
We define a mesoscopic ring in a 2-dimensional electron gas (2DEG) interrupted by two tunnel barriers, enabling us to apply a well-defined potential difference between the two halves of the ring. The electron interference in the ring is…