Related papers: Transport in Graphene Tunnel Junctions
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…
In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a…
Generating discernible valley contrasts and segregating valley-indexed fermions in real space within graphene poses considerable challenges due to the isotropic transport within the continuum energy range for degenerate valleys. This study…
We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both…
The effects of Au grains on graphene conduction and doping are investigated in this report. To obtain a clean Au-graphene contact, Au grains are deposited over graphene at elevated temperature and in high vacuum, before any chemical…
Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…
We report first principles investigations of the nonequilibrium transport properties of a Cu(111)|graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68eV below the Fermi level, a feature…
A resonant chiral tunneling (CT) across a graphene junction (GJ) induced by an external electromagnetic field (EF) is studied. Modulation of the electron and hole wavefunction phases $\varphi$ by the external EF during the CT processes…
We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic…
Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer…
We study the transmission probability of Dirac fermions in graphene scattered by a triangular double barrier potential in the presence of an external magnetic field. Our system made of two triangular potential barrier regions separated by a…
We study quasi-particle transmission through an $n $-$p$ junction in a graphene irradiated by an electromagnetic field (EF). In the absence of EF the electronic spectrum of undoped graphene is gapless, and one may expect the perfect…
Magnetic gates in close proximity to graphene can induce ferromagnetic correlations. We study the effect of such induced magnetization dependent Zeeman splittings on the graphene transport properties. We estimate that induced spin…
We develop an Effective Medium Theory to study the electrical transport properties of disordered graphene. The theory includes non-linear screening and exchange-correlation effects allowing us to consider experimentally relevant strengths…
We consider a single-layer graphene with high ripples, so that the pseudo-magnetic fields due to these ripples are strong. If the magnetic length corresponding to a typical pseudo-magnetic field is smaller than the ripple size, the…
By means of an envelope function analysis, we perform a numerical investigation of the conductance behavior of a graphene structure consisting of two regions (dots) connected to the entrance and exit leads through constrictions and…
We use the non-equilibrium Green function (NEGF) method in the ballistic limit to provide a quantitative description of the conductance of graphene pn junctions - an important building block for graphene electronics devices. In this paper,…
The important experimental advances in graphene fabrication and its peculiar transport properties motivated researchers to utilize graphene as a potential basis for the next generation of fast and smart electronic devices. In this article,…
We investigate the current-voltage characteristics of high-transparency superconductor-insulator-normal metal (SIN) junctions with the specific tunnel resistance below 30 kOhm per square micron. The junctions were fabricated from different…
We employ the tight-binding propagation method to study Klein tunneling and quantum interference in large graphene systems. With this efficient numerical scheme, we model the propagation of a wave packet through a potential barrier and…