Related papers: Industrially Scalable Process for Silicon Nanowire…
The thermoelectric properties of n type nanoscale three dimensional (3D) Si phononic crystals (PnCs) with spherical pores are studied. Density functional theory and Boltzmann transport equation under the relaxation time approximation are…
Metal nanoparticles are the most frequently used nanostructures in plasmonics. However, besides nanoparticles, metal nanowires feature several advantages for applications. Their elongation offers a larger interaction volume, their…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…
Miniaturization of electronic devices aims at manufacturing ever smaller products, from mesoscopic to nanoscopic sizes. This trend is challenging because the increased levels of dissipated power demands a better understanding of heat…
We propose to reduce the thermal conductivity of silicon nanowires (SiNWs) by introducing small hole at the centre, i.e. construct silicon nanotube (SiNT) structures. Our numerical results demonstrate that a very small hole (only 1%…
Superconducting nanowires are very important due to their applications ranging from quantum technology to astronomy. In this work, we implement a non-invasive process to fabricate nanowires of high-$T_\text{c}$ superconductor…
We report a high-throughput and easy-to-implement approach to fabricate microchannels of nanocrystal superlattices with dimensions of ~4 micrometer^2, thus approaching the size of typical single-crystalline domains. By means of microcontact…
Direct nanoimprinting provides a simple and high-throughput route for producing uniform nanopatterns at great precision and at low costs. However, applying this technique to crystalline metals has been considered as impossible due to…
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for…
We report in-situ synthesis of iron oxide particles inside silicon nitride nanopores via a chemical reaction, monitored by current readout. Nanopores were formed by electroporation on glass chips (diameters from 1.7 to 11.3 nm),…
Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not…
We have developed an efficient scalable kernel method for thermal transport in open systems, with which we have computed the thermal conductance of a junction between bulk silicon and silicon nanowires with diameter up to 10 nm. We have…
Thermal transport behavior in silicene nanotubes has become more important due to the application of these promising nanostructures in the engineering of next-generation nanoelectronic devices. We apply non-equilibrium molecular dynamics…
We fabricate and characterize waveguides composed of closely spaced and longitudinally oriented silicon ridges etched into silicon-on-insulator wafers. Through both guided mode and bulk measurements, we demonstrate that the patterning of…
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C.…
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…
In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (< 1$\mu$m) platforms, are highly relevant for…
Nanoporosity in silicon results in an interface-dominated mechanics, fluidics and photonics that are often superior to the ones of the bulk material. However, their active control, e.g. as a response to electronic stimuli, is challenging…
In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation…
Exotic manipulation of the flow of photons in nanoengineered semiconductor materials with an aperiodic distribution of nanostructures plays a key role in efficiency-enhanced and industrially viable broadband photonic technologies. Through a…