Related papers: Scattering of band carriers by neutral and charged…
We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$\Omega$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the…
Scattering by charged impurities is known to mainly determine transport properties of electrons in modern quantum materials, but it remains poorly studied for materials with Mexican hat dispersion. Due to such nontrivial features as a…
Quasi-one dimensional electron systems have been created using a suspended helium film on a structured substrate. The electron mobility along the channel is calculated by taking into account the essential scattering processes of electrons…
We consider scattering and transport in interacting quantum wires that are connected to leads. Such a setup can be represented by a minimal model of interacting fermions with inhomogeneities in the form of sudden changes in interaction…
The quadratic low-temperature dependence of resistance in ordinary metals is determined by the momentum relaxation due to electron-electron scattering in the presence Umklapp processes and scattering on impurities. In metals without…
We use the numerical renormalization group method tocalculate the single particle matrix elements $\cal T$ of the many body $T$-matrix of the conduction electrons scattered by a magnetic impurity at T=0 temperature. Since $\cal T$…
In many organic molecules the strong coupling of excess charges to vibrational modes leads to the formation of polarons, i.e., a localized state of a charge carrier and a molecular deformation. Incoherent hopping of polarons along the…
Reported electron and hole mobilities, and their saturation velocities, in diamond span orders of magnitude across the literature. We attribute this dispersion primarily to (i) the electric-field window probed in TCT measurements, (ii) the…
We present energy- and charge-resolved measurements of low and hyperthermal energy Na+ ions scattered from a Ag(001) surface. With the primary ion beam oriented along the [110] crystal direction, distinct peaks in the energy distributions…
As was noted in [3], in order to verify the assumption that the behavior of the polarization dependences of the terahertz emission by hot electrons from $n$-Ge is determined by the type of carrier scattering, it is necessary to perform…
In this paper electron-impurity scattering coefficient of Bloch waves for one dimensional Dirac comb potential is used for calculation of temperature dependence of resistivity within kinetic theory. We restrict ourselves by scattering on…
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…
The electron transport in inhomogeneous quasi-one-dimensional conducting channels on the liquid helium surface are studied in the temperature range 0.6-1.5 K. Inhomogeneities are created by charging the substrate on which the conducting…
We present electronic structure and transport calculations for hydrogen and lithium chains, using density functional theory and scattering theory on the Green's function level, to systematically study impurity effects on the transmission…
The anisotropic electron transport in the (001) plane of sublimation-grown Cl$_{2}$-NDI (naphthalene diimide) single crystals is analysed over a temperature range between 175 K and 300 K. Upon cooling from room temperature to 175 K the…
Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room…
Scattering of excitons by free carriers is a phenomena which is especially important when considering moderately to heavily doped semiconductors in low temperature experiments, where the interaction of excitons with acoustic and optical…
We report the detailed optical properties of Cd$_3$As$_2$ crystals in a wide parameter space: temperature, magnetic field, carrier concentration and crystal orientation. We investigate high-quality crystals synthesized by three different…
The electronic transport behaviour of materials determines their suitability for technological applications. We develop an efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first…
We calculate the temperature-dependent charge carrier transport of bilayer graphene (BLG) impacted by Coulomb impurity scattering within the random phase approximation. We find the polarizability is equal to the density of states at zero…