Related papers: Irradiated bilayer graphene
We report on microscopic measurements of the low-energy electronic structures both at zigzag and armchair edges of bilayer graphene using scanning tunneling microscopy and spectroscopy (STM and STS). We have found that, both in the absence…
We present perturbative analytical results of the Landau level quasienergy spectrum, autocorrelation function and out of plane pseudospin polarization for a single graphene sheet subject to intense circularly polarized terahertz radiation.…
We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat…
Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…
We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of…
The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…
In the framework of the Floquet theory of periodically driven quantum systems, it is demonstrated that irradiation of graphene by a circularly polarized electromagnetic field induces an attractive area in the core of repulsive potentials.…
Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…
The density of states and differential entropy per particle are analyzed for Dirac-like electrons in graphene subjected to a perpendicular magnetic field and an in-plane electric field. For comparison, the derived density of states is…
The Raman shift, broadening, and relative Raman intensities of bilayer graphene are computed as functions of the electron concentration. We include dynamic effects for the phonon frequencies and we consider the gap induced in the band…
Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer…
The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are…
The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band-edge as $\nu(\epsilon)\propto…
Anderson impurity problem is considered for a graphene bilayer subject to a gap-opening bias. In-gap localized states are produced even when the impurity level overlaps with the continuum of band electrons. The effect depends strongly on…
We investigate the charge carrier dynamics in bilayer graphene subject to monochromatic laser irradiation within the Landau level quantization regime. Even though the radiation field does not lift the energy degeneracy of the lowest Landau…
Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number…
Here we show that the Pfaffian state proposed for the $\frac52$ fractional quantum Hall states in conventional two-dimensional electron systems can be readily realized in a bilayer graphene at one of the Landau levels. The properties and…
Electron interactions in undoped bilayer graphene lead to instability of the gapless state, `which-layer' symmetry breaking, and energy gap opening at the Dirac point. In contrast to single layer graphene, the bilayer system exhibits…
The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…
We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by…