Related papers: Marginality of bulk-edge correspondence for single…
We study the states localized near an interface between conducting and insulating bilayer graphene (BLG) and show that they have highly unusual properties that have no analog in conventional systems. Moreover, the states belonging to the…
The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely…
The edges of graphene-based systems possess unusual electronic properties, originating from the non-trivial topological structure associated to the pseudo-spinorial character of the electron wave-functions. These properties, which have no…
The electronic structures of graphene systems and topological insulators have closely-related features, such as quantized Berry phase and zero-energy edge states. The reason for these analogies is that in both systems there are two relevant…
Twisted bilayer graphene gives rise to large moir\'{e} patterns that form a triangular network upon mechanical relaxation. If gating is included, each triangular region has gapped electronic Dirac points that behave as bulk topological…
Bilayer graphene (BLG) offers a rich platform for broken symmetry states stabilized by interactions. In this work we study the phase diagram of BLG in the quantum Hall regime at filling factor $\nu=0$ within the Hartree-Fock approximation.…
Electronic states at domain walls in bilayer graphene are studied by analyzing their four and two band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories…
The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this…
The valley degree of freedom in 2D semiconductors, such as gapped bilayer graphene (BLG) and transition metal dichalcogenides, is a promising carrier of quantum information in the emerging field of valleytronics. While valley dynamics have…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
Gapless edge modes hosted by chirally-stacked trilayer graphene display unique features when a bulk gap is opened by applying an interlayer potential difference. We show that trilayer graphene with half-integer valley Hall conductivity…
Using the continuum model, we investigate the electronic properties of two types of bilayer graphene (BLG) quantum ring (QR) geometries: (i) an isolated BLG QR and (ii) a monolayer graphene (MLG) with a QR put on top of an infinite graphene…
The interface between two materials described by spectrally gapped Hamiltonians is expected to host an in-gap interface mode, whenever a certain topological invariant changes across the interface. We provide a precise statement of this…
The nature of the interaction-driven spontaneously broken-symmetry state in charge neutral bilayer graphene (BLG) has attracted a lot of interest. Theoretical studies predict various ordered states as the candidates for the ground state of…
An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene…
A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to remain a zero-gap material in the whole range of…
Topological insulators are noninteracting, gapped fermionic systems which have gapless boundary excitations. They are characterized by topological invariants, which can be written in many different ways, including in terms of Green's…
Topological insulators can be characterized alternatively in terms of bulk or edge properties. We prove the equivalence between the two descriptions for two-dimensional solids in the single-particle picture. We give a new formulation of the…
We investigate transport properties through a rectangular potential barrier in AB-stacked bilayer graphene (AB-BLG) gapped by dielectric layers. Using the Dirac-like Hamiltonian with a transfer matrix approach we obtain transmission and…
One of the hallmarks of topological insulators is the correspondence between the value of its bulk topological invariant and the number of topologically protected edge modes observed in a finite-sized sample. This bulk-boundary…