Related papers: Full first-principles theory of spin relaxation in…
We present a first-principles approach for computing the phonon-limited $T_1$ spin relaxation time due to the Elliot-Yafet mechanism. Our scheme combines fully-relativistic spin-flip electron-phonon interactions with an approach to compute…
We predict "intrinsic" spin relaxation times ($T_{1}$) of graphite due to spin-orbit-phonon interaction, i.e., the combination of spin-orbit coupling and electron-phonon interaction, using our developed first-principles density-matrix…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon,…
Designing new quantum materials with long-lived electron spin states urgently requires a general theoretical formalism and computational technique to reliably predict intrinsic spin relaxation times. We present a new, accurate and universal…
We report experimental study of spin transport in all-metal nanowire spin valve structures. The nanowires have a diameter of 50 nm and consist of three layers - cobalt, copper and nickel. Based on the experimental observations, we conclude…
We present an experimental study of the longitudinal electron-spin relaxation time (T1) of negatively charged nitrogen-vacancy (NV) ensembles in diamond. T1 was studied as a function of temperature from 5 to 475 K and magnetic field from 0…
We investigate the fundamental mechanism of spin phonon coupling in the negatively charged nitrogen vacancy center $(\mathrm{NV}^-)$ in diamond in order to calculate the spin lattice relaxation time $T_1$ and its temperature dependence from…
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the…
We introduce a computational framework for first-principles density matrix transport within the Wigner function formalism to predict transport of quantum-mechanical degrees of freedom such as spin over long time and length scales. This…
GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a…
The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed…
Spin-flip Eliashberg function $\alpha_S^2F$ and temperature-dependent spin relaxation time $T_1(T)$ are calculated for aluminum using realistic pseudopotentials. The spin-flip electron-phonon coupling constant $\lambda_S$ is found to be…
We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a…
Temperature dependent electron spin resonance (ESR) measurements are reported on stage 1 potassium doped graphite, a model system of biased graphene. The ESR linewidth is nearly isotropic and although the g-factor has a sizeable anisotropy,…
Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, we use first-principles density-matrix…
In graphene, out-of-plane (flexural) vibrations and static ripples imposed by the substrate relax the electron spin, intrinsically protected by mirror symmetry. We calculate the relaxation times in different scenarios, accounting for all…
An atomistic method of calculating the spin-lattice relaxation times ($T_1$) is presented for donors in silicon nanostructures comprising of millions of atoms. The method takes into account the full band structure of silicon including the…