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Phase change material (PCM) features distinct optical or electronic properties between amorphous and crystalline states. Recently, it starts to play a key role in the emerging photonic applications like optoelectronic display, dynamic…
The control of the dielectric and conductive properties of device-level systems is important for increasing the efficiency of energy- and information-related technologies. In some cases, such as neuromorphic computing, it is desirable to…
We consider light propagation in a silicon dioxide substrate with implanted ${\mathrm{Er}}^{3+}$ ions and silver nanoparticles that are randomly and homogeneously distributed in the substrate. When their densities are large enough, the…
Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials…
Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical…
We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic…
Silicon, despite its abundance and high energy density, remains underexplored as a carbon-free fuel, with limited data available on its combustion characteristics. In this work, the combustion behaviour of silicon particles is examined…
Silicon offers great promise as a potential anode active material and the optimum alternative to lithium metal in all-solid-state lithium-ion batteries. However, its practical application is limited by severe volume expansion (~300%) during…
Nanoscale electronic devices are of great interest for all kinds of applications like switching, energy conversion and sensing. The objective of this chapter, however, is not to discuss specific devices or applications. Rather it is to…
Electron stimulated desorption of cyclopentene from the Si(100)-2x1 surface is studied experimentally with cryogenic UHV STM and theoretically with transport, electronic structure, and dynamical calculations. Unexpectedly for a saturated…
The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for…
Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is…
Muon spin rotation with low-energy muons (LE{\mu}SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of $\approx$\SI{200}{\nano\meter}. In this…
Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an…
Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…
Without a periodic reference framework, local structures in noncrystalline solids are difficult to specify, but they still exert an enormous influence on materials properties. For example, thermomechanical responses of organic and inorganic…
The formation of hafnium silicate films (HfSixOy) for use as gate oxides with large dielectric constant by solid state reaction of Hf metal and SiO2 was investigated. Thin, fully reacted silicate films could be formed, and were thermally…
Despite its excellent performance in microelectronic industry, silicon was not able to perform well in photonic devices arena. This is because the silicon has never been a good optical source mainly due to its indirect band gap structure.…
Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of…
Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…