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The magnetism of C-doped SnO$_{2}$ (001) surfaces is studied using first-principles calculations. It is found that carbon does not induce magnetism in bulk SnO$_{2}$ when located at the oxygen site, but shows a large magnetic moment at the…

Materials Science · Physics 2010-02-13 Gul Rahman , Víctor M. García-Suárez

The creation of magnetism on non-magnetic semiconductor surfaces is of importance for the realization of spintronics devices. Especially, the coupling of electron spins within quantum nanostructures can be utilized for nanomagnetism…

Mesoscale and Nanoscale Physics · Physics 2018-11-21 Xiao-Yan Ren , Chun-Yao Niu , Seho Yi , Shunfang Li , Jun-Hyung Cho

The temperature dependence of conductivity $\sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by…

Disordered Systems and Neural Networks · Physics 2009-10-31 X. G. Feng , Dragana Popovic , S. Washburn

The formation energy and local magnetic moment of a series of point defects in CaB$_6 $ are computed using a supercell approach within the generalized gradient approximation to density functional theory. Based on these results, speculations…

Materials Science · Physics 2009-11-07 R. Monnier , B. Delley

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects…

We study from first principles the magnetism in graphene induced by single carbon atom defects. For two types of defects considered in our study, the hydrogen chemisorption defect and the vacancy defect, the itinerant magnetism due to the…

Materials Science · Physics 2007-05-23 Oleg V. Yazyev , Lothar Helm

Recent experiments on the silicon terminated $3\times 2$ SiC(100) surface indicated an unexpected metallic character upon hydrogen adsorption. This effect was attributed to the bonding of hydrogen to a row of Si atoms and to the…

Materials Science · Physics 2009-11-11 R. Di Felice , C. M. Bertoni , C. A. Pignedoli , A. Catellani

Neutral silicon-carbon divacancy (V$_{Si}$V$_{C}$) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline centers. Within the theoretical framework of spin-polarized…

The advent of milli-kelvin scanning tunneling microscopes (STM) with inbuilt magnetic fields has opened access to the study of magnetic phenomena with atomic resolution at surfaces. In the case of single atoms adsorbed on a surface, the…

Mesoscale and Nanoscale Physics · Physics 2012-06-19 Jean-Pierre Gauyacq , Nicolas Lorente , Frederico Dutilh Novaes

Motivated by the observation of ferromagnetism in carbon foams, a massive search for (meta)stable disorder structures of elemental carbon is performed by a generate and test approach. We use the Density Functional based program SIESTA to…

Mesoscale and Nanoscale Physics · Physics 2015-06-15 M. A. Akhukov , M. I. Katsnelson , A. Fasolino

This study explores atomic and molecular adsorption on a number of early transition-metal carbides (TMC's) by means of density-functional theory calculations. Trend studies are conducted with respect to both period and group in the periodic…

Materials Science · Physics 2012-05-14 Aleksandra Vojvodic , Carlo Ruberto , Bengt I. Lundqvist

Using ab-initio calculations based on density functional theory, we investigate the effects of vacancies on the electronic and magnetic properties of zigzag SiC nanoribbons (Z-SiCNR). Single (V_C and V_Si) and double (V_SiV_Si and V_SiV_C)…

Materials Science · Physics 2015-03-20 Juliana M. Morbec , Gul Rahman

We present ab initio calculations for single-atom vacancies in graphene. In agreement with earlier work, we find that vacancies are responsible for the magnetism recently observed experimentally, creating a center with net spin. For small…

The influence of vacancies and interstitial atoms on magnetism in Pu has been considered in frames of the Density Functional Theory (DFT). The relaxation of crystal structure arising due to different types of defects was calculated using…

Strongly Correlated Electrons · Physics 2018-11-01 A. O. Shorikov , M. A. Korotin , V. I. Anisimov , V. V. Dremov , Ph. A. Sapozhnikov

The effect of hydrogen adsorption on the magnetic properties of an Fe$_3$ cluster immersed in a Cu(111) surface has been calculated using densifty functional theory and the results used to parametrize an Alexander-Anderson model which takes…

Mesoscale and Nanoscale Physics · Physics 2013-12-16 Pavel F. Bessarab , Valery M. Uzdin , Hannes Jónsson

We study the effect of localized magnetic moments on the conductance of a helical edge. Interaction with a local moment is an effective backscattering mechanism for the edge electrons. We evaluate the resulting differential conductance as a…

Mesoscale and Nanoscale Physics · Physics 2016-12-21 Jukka I. Väyrynen , Florian Geissler , Leonid I. Glazman

We investigate the electronic structure of carbon nanotubes functionalized by adsorbates anchored with single C-C covalent bonds. We find that, despite the particular adsorbate, a spin moment with a universal value of 1.0 $\mu_B$ per…

Mesoscale and Nanoscale Physics · Physics 2011-08-17 Elton J. G. Santos , D. Sanchez-Portal , A. Ayuela

We investigate the possible magnetism on the Si(111)-$\sqrt 3 \times \sqrt 3$ surface, which is stabilized for highly boron-doped samples, by using first-principles calculations. When the silicon adatom on top of a boron atom is removed to…

Materials Science · Physics 2018-04-04 Chang-Youn Moon , Daejin Eom , Ja-Yong Koo

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon carbide (4H-SiC) under a carbon-rich condition. We applied a…

Materials Science · Physics 2019-03-26 Takuma Kobayashi , Kou Harada , Yu Kumagai , Fumiyasu Oba , Yu-ichiro Matsushita

The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation are investigated by first-principles calculation based on the density functional…

Materials Science · Physics 2024-01-09 Mukai Tsunasaki , Tomoya Ono , Mitsuharu Uemoto
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