Related papers: Resonant Tunneling in a Dissipative Environment
A scheme of resonant tunneling through the metastable state of semiconductor quantum dot is presented and implemented in the transport study of freestanding InAs quantum dots grown on GaAs(001) under illumination using conductive atomic…
Resonant tunnelling is studied numerically and analytically with the help of a three-well quantum one-dimensional time-independent model. The simplest cases are considered where the three-well potential is polynomial or piecewise constant.
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
Nonequilibrium dynamics and effective thermalization are studied in a resonant tunneling scenario via multilevel Landau-Zener crossings. Our realistic many-body system, composed of two energy bands, naturally allows a separation of degrees…
Non-equilibrium transport through a quantum dot with one spin-split single-particle level is studied in the cotunneling regime at low temperatures. The Coulomb diamond can be subdivided into parts differing in at least one of two respects:…
This is a brief review of few relevant topics on tunneling of composite particles and how the coupling to intrinsic and external degrees of freedom affects tunneling probabilities. I discuss the phenomena of resonant tunneling, different…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
We study the transport through a quantum dot coupled to two leads by single-mode point contacts. The linear conductance is calculated analytically as a function of a gate voltage and temperature T in the case when transmission coefficients…
We investigate the time-dependent, coherent, and dissipative dynamics of bound particles in single multilevel quantum dots in the presence of sequential tunnelling transport. We focus on the nonequilibrium regime where several channels are…
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential…
By using bosonization method and unitary transformation, we give a general relation between the dimensionless tunneling conductance and the fractional Coulomb blockade conductance peak splitting which is valid both for weak and strong…
We have measured the low temperature conductance of a one-dimensional island embedded in a single mode quantum wire. The quantum wire is fabricated using the cleaved edge overgrowth technique and the tunneling is through a single state of…
We theoretically investigate the escape rate occurring via quantum tunneling in a system affected by tailored dissipation. Specifically, we study the environmental assisted quantum tunneling of the superconducting phase in a current-biased…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
We theoretically investigate time-dependent resonant tunneling via two discrete states in an experimentally relevant setup. Our results show that the dc transport through the system can be controled by applying irradiation with a frequency…
Motivated by a recent experiment on nonlinear tunneling in a suspended Carbon nanotube connected to two normal electrodes [S. Sapmaz, {\it et al}., Phys. Rev. Lett. {\bf 96}, 26801 (2006)], we investigate nonequilibrium vibration-mediated…
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the…
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane)…
Our objective is to study resonant tunneling of an electron in the presence of inelastic scattering by optical phonons. Using a recently developed technique, based on exact mapping of a many-body problem onto a one-body problem, we compute…
We study the Coulomb blockade of tunneling through a double quantum dot. The temperature dependence of the linear conductance is strongly affected by the inter-dot tunneling. As the tunneling grows, a crossover from temperature-independent…