Related papers: Quantum Hall activation gaps in bilayer graphene
We show through both theoretical arguments and numerical calculations that graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields (B) and strain. The latter produces time-reversal…
Monolayer graphene under a strong magnetic field near charge neutrality manifests the integer and fractional quantum Hall effects. Since only some of the four spin/valley flavors available to the electrons in each Landau level manifold are…
By taking into account the charge and spin orderings and the exchange interactions between all the Landau levels, we investigate the integer quantum Hall effect of electrons in graphene using the mean-field theory. At the fillings $\nu =…
We have investigated the fractional quantum Hall states for the Dirac electrons in a graphene layer in different Landau levels. The relativistic nature of the energy dispersion relation of the electrons in the graphene significantly…
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains.…
We report on microscopic measurements of the low-energy electronic structures both at zigzag and armchair edges of bilayer graphene using scanning tunneling microscopy and spectroscopy (STM and STS). We have found that, both in the absence…
We obtain analytical expressions for the eigenstates and the Landau level spectrum of biased graphene bilayers in a magnetic field. The calculations are performed in the context of a four-band continuum model and generalize previous…
We present the first measurements of cyclotron resonance of electrons and holes in bilayer graphene. In magnetic fields up to B = 18 T we observe four distinct intraband transitions in both the conduction and valence bands. The transition…
We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely twisted bilayer graphene with a large twist angle, as an ideal ground for realizing interlayer-coherent excitonic condensates. In these…
We investigate the contribution of the low-energy electronic excitations towards the Raman spectrum of bilayer graphene for the incoming photon energy Omega >> 1eV. Starting with the four-band tight-binding model, we derive an effective…
Bilayer graphene has been predicted to give unprecedented tunability of the electron-electron interaction with the help of external parameters, allowing one to stabilize different fractional quantum Hall states. Recent experimental works…
Recent experiments indicate that AA-stacked bilayer graphenes (BLG) could exist. Since the energy bands of the AA-stacked BLG are different from both the monolayer and AB-stacked bilayer graphenes, different integer quantum Hall effect in…
We report on magneto-transport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the twelve-fold degeneracy…
The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a…
Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality…
It is known that $n$-degenerate Landau levels with the same spin-valley quantum number can be realized by $n$-layer graphene with rhombohedral stacking under magnetic field $B$. We find that the wave functions of degenerate Landau levels…
We present activation gap measurements of the fractional quantum Hall effect (FQHE) in the second Landau level. Signatures for 14 (5) distinct incompressible FQHE states are seen in a high (low) mobility sample with the enigmatic 5/2 even…
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…
Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…
The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal warping and a splitting of the parabolic touching bands at the K point of the reciprocal space into four…