Related papers: Phonons in graphene with point defects
Excitation of electron-hole pairs in the vicinity of the Dirac cone by the Coulomb interaction gives rise to an asymmetric Breit-Wigner-Fano lineshape in the phonon Raman spectra in graphene. This asymmetric lineshape appears due to the…
We investigate the effects of wedge disclination on charge carriers in circular graphene quantum dots subjected to a magnetic flux. Using the asymptotic solutions of the energy spectrum for large arguments, we approximate the scattering…
We derive the frequency shifts and the broadening of $\Gamma$ point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron…
The electronic bound states and resonances in the vicinity of the Dirac point energy due to the adsorption of calcium dimers on a suspended graphene monolayer are explored theoretically using density functional theory (DFT) and an improved…
We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…
Kondo physics in doped monolayer graphene is predicted to exhibit unusual features due to the linear vanishing of the pristine material's density of states at the Dirac point. Despite several attempts, conclusive experimental observation of…
A theoretical model is provided to address the parameters influencing the electronic properties of kink-structured carbon chain at 0K. It is studied by the principle of DFT and solving the numerical 1D time-independent Schr\"odinger…
It is known that the near-field spectrum of the local density of states of the electromagnetic field above a SiC/air interface displays an intense narrow peak due to the presence of a surface polariton. It has been recently shown that this…
The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to…
Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large…
The chapter generalizes results on influence of uniaxial strain and adsorption on the electron states and charge transport or localization in graphene with different configurations of imperfections (point defects): resonant (neutral)…
Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…
We present realistic simulations of quantum confinement effects in ballistic graphene quantum dots with linear dimensions of 10 to 40 nm. We determine wavefunctions and energy level statistics in the presence of disorder resulting from edge…
Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…
Properties of graphene plasmons are greatly affected by their coupling to phonons. While such coupling has been routinely observed in both near-field and far-field graphene spectroscopy, the interplay between coupling strength and mode…
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical…
The lattice dynamics of Ba1-xKxFe2As2 (x = 0.00, 0.27) have been studied by inelastic X-ray scattering measurement at room temperature. K doping induces the softening and broadening of phonon modes in the energy range E = 10-15 meV.…
We present a theoretical description of the electronic properties of graphene in the presence of disorder, electron-electron interactions, and particle-hole symmetry breaking. We show that while particle-hole asymmetry, long-range Coulomb…
We develop a theory of probing phonon modes of van-der-Waals materials using the quantum twisting microscope. While elastic tunneling dominates the tunneling current at small twist angles, the momentum mismatch between the K-points of tip…
We investigate the energy spectrum, wave functions, and local density of states of an electrical dipole placed on a sheet of gapped graphene as function of the charge strength Z{\alpha} for different sizes of the dipole and for different…