Related papers: Rewritable nanoscale oxide photodetector
Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates,…
Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale…
Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By using plasmonic nanostructures, i.e. nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent…
Optical switches are one of the most important elements of integrated photonics. Here, we designed, fabricated and characterized several nanophotonic optical switches (NOSs) in silicon that exhibit ultra-compact footprint, along with…
Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their…
Lithium niobate-on-insulator (LNOI) is an emerging photonic platform that exhibits favorable material properties (such as low optical loss, strong nonlinearities, and stability) and enables large-scale integration with stronger optical…
Photodetectors are typically based on photocurrent generation from electron-hole pairs in semiconductor structures and on bolometry for wavelengths that are below bandgap absorption. In both cases, resonant plasmonic and nanophotonic…
3D additive manufacturing enables the fabrication of nanophotonic structures with subwavelength features that control light across macroscopic scales. Gradient-based optimization offers an efficient approach to design these complex and…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic…
Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction…
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of…
Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the…
The miniaturization of diagnostic devices that exploit optical detection schemes requires the design of light-sources combining small size, high performance for effective excitation of chromophores, and mechanical flexibility for easy…
Scaling the photon-detection area of superconducting nanowire single-photon detectors (SNSPDs) has traditionally been achieved by nanowire meandering. However, material inhomogeneities and fabrication-induced defects, such as line-edge…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
Nanophotonics provides the ability to rapidly and precisely reconfigure light beams on a compact platform. Infrared nanophotonic devices are widely used in data communications to overcome traditional bandwidth limitations of electrical…