Related papers: Universal valence-band picture of the ferromagneti…

To clarify the whole picture of the valence-band structures of prototype ferromagnetic semiconductors (III,Mn)As (III: In and Ga), we perform systematic experiments of the resonant tunneling spectroscopy on [(In_0.53Ga_0.47)_1-x Mn_x]As…

We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga1-xMnxAs with the Mn content x from ~0.01 to 3.2%. The Fermi level of Ga1-xMnxAs exists in the band gap in the whole x…

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping…

Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$…

The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and…

The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs…

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to…

The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key…

Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the…

We introduce a Heisenberg Hamiltonian for describing the magnetic properties of GaMnAs. Electronic degrees of freedom are integrated out leading to a pairwise interaction between Mn spins. Monte Carlo simulations in large systems are then…

The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the…

We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements…

The band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band…

Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of…

We complete our earlier (Phys. Rev. B, {\bf 66}, 134435 (2002)) study of the electronic structure, exchange interactions and Curie temperature in (GaMn)As and extend the study to two other diluted magnetic semiconductors (GaCr)As and…

The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the hole state as being extended or localized. The calculation leads to a…

We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization…

We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands…

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a…

We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high…