Related papers: Anisotropic charge transport in non-polar GaN QW: …
We calculate the non-equilibrium charge transport properties of nanoscale junctions in the steady state and extend the concept of charge susceptibility to the non-equilibrium conditions. We show that the non-equilibrium charge…
We study the evolution of an energetic jet which propagates in an anisotropic quark-gluon plasma, as created in the intermediate stages of ultrarelativistic heavy-ion collisions. We argue that the partons of the jet should acquire a…
Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet…
Direction-dependent charge transport and optical responses are characteristic of van der Waals (vdW) materials with strong in-plane anisotropy. While transition-metal trichalcogenides (TMTCs) exemplify this behavior, heavier analogs remain…
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a…
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly…
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of…
Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2 and nu=11/2 for temperatures below 150mK. In stark contrast, the transport at nu=9/2 is isotropic for…
Anisotropic heat transfer offers promising solutions to the efficient heat dissipation in the realm of electronic device thermal management. However, the fundamental origin of the anisotropy of thermal transport remains mysterious. In this…
In several situations of interest, spin polarization may be generated far from the boundaries of a sample by nonlinear effects of an electric current, even when such a generation is forbidden by symmetry in the linear regime. We present an…
The charge transport in some organic semiconductors demonstrates nonlinear properties and further universal power-law scaling with both bias and temperature. The physical origin of this behavior is investigated here using variable range…
Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates…
Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray optical disks. A major limitation for further adoption of GaN in power electronics is its low hole mobility. In order to address this challenge, here…
We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear…
Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying…
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum…
We report the inclusion of phonon scattering to our recently established numerical package QmeQ for transport in quantum dot systems. This enables straightforward calculations for a large variety of devices. As examples we show (i)…
Recent experiments have shown the potential of surface acoustic waves as a mean for transporting charge and spin in quantum wells. In particular, they have proven highly effective for the coherent transport of spin-polarized wave packets,…
High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited…
During the last 15 years bottom-up on-surface synthesis has been demonstrated as an efficient way to synthesize carbon nanostructures with atomic precision, opening the door to unprecedented electronic control at the nanoscale. Nanoporous…