Related papers: Gap opening in topological-defect lattices in grap…
For non-topological quantum materials, introducing defects can significantly alter their properties by modifying symmetry and generating a nonzero analytical index, thus transforming the material into a topological one. We present a method…
In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally…
We investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the…
Topological defects (e.g. pentagons, heptagons and pentagon-heptagon pairs) have been widely observed in large scale graphene and have been recognized to play important roles in tailoring the mechanical and physical properties of…
We present a computational study on the topology, energetics and structural deformations for a large number of experimentally observed defect configurations in graphene. We find that both the number of lost hexagonal carbon rings and…
Two-dimensional (2D) materials, composed of single atomic layers, have attracted vast research interest since the breakthrough discovery of graphene. One major benefit of such systems is the simple ability to tune the chemical potential by…
The Dirac fermions at the surface of a topological insulator can be gapped by introducing magnetic dopants. Alternatively, in an ultra-thin slab with thickness on the order of the extent of the surface states, both the top and bottom…
The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene…
Growth of graphene on monolayer transition-metal dichalcogenides presents opening on band gap and giant spin-orbit coupling which paves the way to achieve a useful hybrid structure for electronics and spintronics applications. Increase of…
By means of the first-principles calculations combined with the tight-binding approximation, the strain-induced semiconductor-semimetal transition in graphdiyne is discovered. It is shown that the band gap of graphdiyne increases from 0.47…
A simple interlayer pair tunneling is solved exactly. We find that in the normal state spin-1/2 particle and hole excitations are gapped. But the state is an unusual metal, characterized by novel fermionic spin zero and charge +2e and -2e…
The electrons in undoped graphene behave as massless Dirac fermions. Therefore graphene can serve as an unique condensed-matter laboratory for the study of various relativistic effects, including quantum electrodynamics (QED) phenomena.…
Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological…
Topologically protected fermionic quasiparticles occur in metals with band degeneracy as a consequence of band structure topology. Here we unveil topological semimetal and metal phases in a variety of non-symmorphic collinear…
It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by…
Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate…
Topological nodal superconductors possess gapless low energy excitations that are characterized by point or line nodal Fermi surfaces. In this work, using a coupled wire construction, we study topological nodal superconductors that have…
We show that, if graphene is subjected to the potential from an external superlattice, a band gap develops at the Dirac point provided the superlattice potential has broken inversion symmetry. As a numerical example, we calculate the band…
Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with…
Chemical, mechanical, thermal and/or electronic properties of bulk or low-dimensional materials can be engineered by introducing structural defects to form novel functionalities. When using particles irradiation, these defects can be…